SCHEMBL4279258

SCHEMBL4279258

CCCCCCCCCCCCN(C)C.CCCCCCCCN(CCO)CCO

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 6/20 0.65
ALDH1A1 P00352 2/20 0.48
TSHR P16473 2/20 0.48
MAPT P10636 1/20 0.46
LMNA P02545 2/20 0.44
HSD17B10 Q99714 1/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.40
KDM5A P29375 2/20 0.39
PHF8 Q9UPP1 2/20 0.39
KDM4C Q9H3R0 1/20 0.39
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
S1PR2 O95136 1/20 0.37
S1PR1 P21453 1/20 0.37
S1PR3 Q99500 1/20 0.37
S1PR5 Q9H228 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23116960 0.94 DNM1 (0.56) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL23116978 0.94 DNM1 (0.56) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL27105127 0.94 DNM1 (0.56) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL23135839 0.94 DNM1 (0.56) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL27104938 0.94 DNM1 (0.56) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL23117054 0.91 DNM1 (0.52) DNM1ALDH1A1TSHRMAPTLMNA
SCHEMBL22806605 0.91 LMNA (0.52) DNM1ALDH1A1TSHRLMNAHSD17B10
SCHEMBL22645993 0.91 LMNA (0.52) DNM1ALDH1A1TSHRLMNAHSD17B10
SCHEMBL22806624 0.91 LMNA (0.52) DNM1ALDH1A1TSHRLMNAHSD17B10
SCHEMBL22646107 0.91 LMNA (0.52) DNM1ALDH1A1TSHRLMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7604751-B2 chemical mechanical polishing a surface containing an insulating layer of Cu or alloy using a polishing liquid comprising an aliphatic or armoatic tertiaryamine, hydrogen peroxide as oxidizing agent and an aliphatic or aromatic carboxylic, phosphonic or polyaminoalkylcarboxylic acid; colloidal silica KAO CORPORATION (JP) 2009-10-20 US disclosed
US-20070045233-A1 Polishing liquid composition KAO CORPORATION (JP) 2007-03-01 US disclosed
US-20060240672-A1 Polishing liquid composition KAO CORPORATION (JP) 2006-10-26 US disclosed
US-7118685-B1 Polishing liquid composition KAO CORPORATION (JP) 2006-10-10 US disclosed
EP-1198534-B1 POLISHING LIQUID COMPOSITION KAO CORP (JP) 2004-10-13 EP disclosed
EP-1198534-A1 POLISHING LIQUID COMPOSITION Kao Corporation (JP) 2002-04-24 EP disclosed
WO-2001004231-A1 POLISHING LIQUID COMPOSITION KAO CORPORATION (JP) 2001-01-18 WO disclosed