SCHEMBL4280771

SCHEMBL4280771

Cl[SiH2]C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 5/20 0.38
GRIN3B O60391 5/20 0.38
GRIN1 Q05586 5/20 0.38
GRIN2A Q12879 5/20 0.38
GRIN2B Q13224 5/20 0.38
GRIN2C Q14957 5/20 0.38
GRIN3A Q8TCU5 5/20 0.38
LMNA P02545 2/20 0.38
SLC22A2 O15244 2/20 0.38
SLC47A1 Q96FL8 2/20 0.38
SLC22A1 O15245 1/20 0.38
TSHR P16473 1/20 0.38
NFKB1 P19838 1/20 0.38
STAT6 P42226 1/20 0.38
SIGMAR1 Q99720 1/20 0.38
POLB P06746 1/20 0.36
THRB P10828 1/20 0.36
BLM P54132 1/20 0.36
PMP22 Q01453 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10981506 0.71
SCHEMBL3381958 0.69 GRIN2D (0.38) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3918575 0.63 LMNA (0.33) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL10877238 0.62 GRIN2D (0.44) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3360 0.62 GRIN2D (0.44) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL2214841 0.62 GRIN2D (0.44) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL192524 0.62 GRIN2D (0.44) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL963771 0.60 GRIN2D (0.50) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Phosphine SCHEMBL28211022 0.60 GRIN2D (0.42) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL24236 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7622399-B2 Method of forming low-k dielectrics using a rapid curing process SILECS OY (FI) 2009-11-24 US disclosed
US-7622399-B2 Method of forming low-k dielectrics using a rapid curing process SILECS OY (FI) 2009-11-24 US disclosed
US-20050064726-A1 Method of forming low-k dielectrics SILECS OY (FI) 2005-03-24 US disclosed