⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10802613 | 0.82 | — | — | |
| SCHEMBL10410008 | 0.82 | — | — | |
| SCHEMBL11203222 | 0.82 | — | — | |
| SCHEMBL19346 | 0.82 | — | — | |
| SCHEMBL3845487 | 0.67 | — | — | |
| SCHEMBL3054286 | 0.67 | — | — | |
| SCHEMBL5574388 | 0.67 | — | — | |
| SCHEMBL962562 | 0.67 | — | — | |
| SCHEMBL34402 | 0.67 | — | — | |
| SCHEMBL10796443 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115148734-B | Gallium arsenide low noise amplifier and gallium nitride power amplifier monolithic integrated circuit and preparation thereof | 西安电子科技大学广州研究院 | 2024-04-09 | — | — | CN | claimed |
| CN-115148734-A | Gallium arsenide low noise amplifier and gallium nitride power amplifier monolithic integrated circuit and preparation thereof | 西安电子科技大学广州研究院 | 2022-10-04 | — | — | CN | claimed |
| JP-2271670-A | — | — | None | — | — | JP | disclosed |
| CN-115148734-B | Gallium arsenide low noise amplifier and gallium nitride power amplifier monolithic integrated circuit and preparation thereof | 西安电子科技大学广州研究院 | 2024-04-09 | — | — | CN | disclosed |
| CN-115148734-A | Gallium arsenide low noise amplifier and gallium nitride power amplifier monolithic integrated circuit and preparation thereof | 西安电子科技大学广州研究院 | 2022-10-04 | — | — | CN | disclosed |
| CN-107845690-B | Multi-junction photovoltaic device and preparation method thereof | IQE公司 | 2020-09-08 | — | — | CN | disclosed |
| CN-109777303-A | A kind of polishing fluid and application method of germanium crystal chemically mechanical polishing | 青岛凯玉盈商贸有限公司 | 2019-05-21 | — | — | CN | disclosed |
| CN-106784127-B | A kind of binode Thinfilm solar cell assembly and preparation method thereof | 北京创昱科技有限公司 | 2019-02-01 | — | — | CN | disclosed |
| CN-106784127-B | A kind of binode Thinfilm solar cell assembly and preparation method thereof | 北京创昱科技有限公司 | 2019-02-01 | — | — | CN | disclosed |
| US-20180331245-A1 | Dual-junction thin film solar cell module, and preparation method thereof | BEIJING CHUANGYU TECH CO LTD (CN) | 2018-11-15 | — | — | US | disclosed |
| CN-106784127-A | A kind of binode Thinfilm solar cell assembly and preparation method thereof | 北京汉能创昱科技有限公司 | 2017-05-31 | — | — | CN | disclosed |
| WO-1995013626-A1 | HIGH EFFICIENCY SOLAR CELL | APPLIED SOLAR ENERGY CORPORATION (US) | 1995-05-18 | — | — | WO | disclosed |
| US-5405453-A | High efficiency multi-junction solar cell | APPLIED SOLAR ENERGY CORPORATION (US) | 1995-04-11 | — | — | US | disclosed |
| JP-H02271670-A | GERMANIUM/GALLIUM ARSENIDE HETRO STRUCTURE, AND FORMATION THEREOF | NEC CORP | 1990-11-06 | — | — | JP | disclosed |
| US-4947223-A | Semiconductor devices incorporating multilayer interference regions | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY (US) | 1990-08-07 | — | — | US | disclosed |
| EP-0130416-B1 | A PROCESS FOR MAKING AN OHMIC CONTACT TO AN N-TYPE CONDUCTIVITY GROUP III-V SEMICONDUCTOR COMPOUND AND A SEMICONDUCTOR DEVICE HAVING SUCH AN OHMIC CONTACT | International Business Machines Corporation (US) | 1988-10-12 | — | — | EP | disclosed |
| US-4710478-A | Method for making germanium/gallium arsenide high mobility complementary logic transistors | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 1987-12-01 | — | — | US | disclosed |
| US-4710478-A | Method for making germanium/gallium arsenide high mobility complementary logic transistors | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 1987-12-01 | — | — | US | disclosed |
| US-4593307-A | High temperature stable ohmic contact to gallium arsenide | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1986-06-03 | — | — | US | disclosed |
| EP-0130416-A1 | A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact | International Business Machines Corporation (US) | 1985-01-09 | — | — | EP | disclosed |