SCHEMBL435699

SCHEMBL435699

CCCCC(CC)CN(Cc1nc[nH]n1)Cn1nnc2ccccc21

nearest known ligand 0.43

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC9A1 P19634 7/20 0.43
PLA2G4A P47712 1/20 0.37
CYP4Z1 Q86W10 5/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
LMNA P02545 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
RAB9A P51151 3/20 0.34
NPC1 O15118 2/20 0.34
MGAM O43451 1/20 0.33
AMY1A P0DUB6 1/20 0.33
GAA P10253 1/20 0.33
SI P14410 1/20 0.33
MGAM2 Q2M2H8 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3275196 0.85 SLC9A1 (0.55) SLC9A1CYP4Z1MEN1KMT2ALMNA
SCHEMBL238663 0.85 SLC9A1 (0.55) SLC9A1CYP4Z1MEN1KMT2ALMNA
Benzotriazole SCHEMBL20913175 0.79 SLC9A1 (0.45) SLC9A1PLA2G4ACYP4Z1MEN1KMT2A
SCHEMBL909899 0.79 SLC9A1 (0.59) SLC9A1CYP4Z1MEN1KMT2ALMNA
SCHEMBL8615252 0.79 ALDH1A1 (0.36) LMNAL3MBTL1
SCHEMBL28386068 0.78 SLC9A1 (0.53) SLC9A1CYP4Z1MEN1KMT2ALMNA
SCHEMBL9128799 0.78 SLC9A1 (0.53) SLC9A1CYP4Z1MEN1KMT2ALMNA
SCHEMBL5666614 0.76 SLC9A1 (0.44) SLC9A1PLA2G4ACYP4Z1MEN1KMT2A
SCHEMBL4209555 0.75 SLC9A1 (0.46) SLC9A1PLA2G4ACYP4Z1MEN1KMT2A
SCHEMBL31702792 0.73 SLC9A1 (0.61) SLC9A1CYP4Z1LMNARAB9ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107406752-B Polishing agent, stock solution for polishing agent, and polishing method 日立化成株式会社 2020-05-08 CN claimed
US-20070128872-A1 Polishing composition and polishing method SHOWA DENKO K.K. (JP) 2007-06-07 US claimed
EP-1687387-A1 POLISHING COMPOSITION COMPRISING PHOSPHATE ESTERS AND POLISHING METHOD Showa Denko K.K. (JP) 2006-08-09 EP claimed
WO-2005047409-A1 POLISHING COMPOSITION AND POLISHING METHOD SHOWA DENKO K.K. (JP) 2005-05-26 WO claimed
US-20240191362-A1 CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2024-06-13 US disclosed
US-20240191360-A1 CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2024-06-13 US disclosed
EP-4379780-A1 POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-06-05 EP disclosed
EP-4379779-A1 POLISHING SOLUTION, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-06-05 EP disclosed
WO-2024095926-A1 CLEANING LIQUID AND SUBSTRATE CLEANING METHOD 東京応化工業株式会社 2024-05-10 WO disclosed
US-20240101936-A1 AQUEOUS CLEANING LIQUID AND METHOD OF CLEANING ELECTRONIC DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2024-03-28 US disclosed
EP-4339254-A1 POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD Resonac Corporation (JP) 2024-03-20 EP disclosed
US-20230314955-A1 PHOTORESIST STRIPPER AND METHOD OF TREATING SUBSTRATE USING SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
WO-2003104350-A1 METAL POLISH COMPOSITION, POLISHING METHOD USING THE COMPOSITION AND METHOD FOR PRODUCING WAFER USING THE POLISHING METHOD SHOWA DENKO K.K. (JP) 2003-12-18 WO disclosed
US-20030219982-A1 CMP (chemical mechanical polishing) polishing liquid for metal and polishing method HITACHI CHEMICAL CO., LTD (JP) 2003-11-27 US disclosed
US-20030186497-A1 Methods of polishing, interconnect-fabrication, and producing semiconductor devices HITACHI, LTD. 2003-10-02 US disclosed
US-6562719-B2 Methods of polishing, interconnect-fabrication, and producing semiconductor devices HITACHI, LTD. (JP) 2003-05-13 US disclosed
EP-1223609-A1 POLISHING COMPOUND FOR CHEMIMECHANICAL POLISHING AND POLISHING METHOD HITACHI CHEMICAL COMPANY, LTD. (JP) 2002-07-17 EP disclosed
US-20020017630-A1 Abrasive liquid for metal and method for polishing RENESAS ELECTRONICS CORPORATION (JP) 2002-02-14 US disclosed
US-20020016073-A1 Methods of polishing, interconnect-fabrication, and producing semiconductor devices HITACHI, LTD. 2002-02-07 US disclosed
EP-1137056-A1 ABRASIVE LIQUID FOR METAL AND METHOD FOR POLISHING HITACHI CHEMICAL COMPANY, LTD. (JP) 2001-09-26 EP disclosed