⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL4371453 | 0.94 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL4396554 | 0.81 | — | — | |
| SCHEMBL13273388 | 0.76 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL4396556 | 0.76 | — | — | |
| Hydrochloric Acid SCHEMBL10525283 | 0.73 | — | — | |
| Formic Acid SCHEMBL12543951 | 0.73 | — | — | |
| SCHEMBL762989 | 0.69 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL28509507 | 0.68 | ALDH1A1 (0.43) | — | |
| Tetrahydrothiophene SCHEMBL11668788 | 0.68 | NOS2 (0.30) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL2961025 | 0.68 | ALDH1A1 (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8999840-B2 | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-04-07 | — | — | US | disclosed |
| US-8778598-B2 | Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-07-15 | — | — | US | disclosed |
| US-20140004705-A1 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-02 | — | — | US | disclosed |
| US-8536347-B2 | Photoacid generator, chemically amplified resist composition including the same, and associated methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-09-17 | — | — | US | disclosed |
| US-8431331-B2 | Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-04-30 | — | — | US | disclosed |
| CN-101572226-B | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD | 2013-04-24 | — | — | CN | disclosed |
| US-20090274980-A1 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. | 2009-11-05 | — | — | US | disclosed |
| CN-101572226-A | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-11-04 | — | — | CN | disclosed |
| US-20090131684-A1 | Photoacid generator, chemically amplified resist composition including the same, and associated methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-05-21 | — | — | US | disclosed |