SCHEMBL4373898

SCHEMBL4373898

COC(=O)C(C)OCCO

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.38
ALDH1A1 P00352 1/20 0.36
CA14 Q9ULX7 3/20 0.35
ACHE P22303 1/20 0.34
CA12 O43570 2/20 0.33
CHRNB2 P17787 2/20 0.33
CHRNB4 P30926 2/20 0.33
CHRNA3 P32297 2/20 0.33
CHRNA4 P43681 2/20 0.33
TSHR P16473 3/20 0.33
MME P08473 2/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
MGAM O43451 1/20 0.32
GAA P10253 1/20 0.32
SI P14410 1/20 0.32
MGAM2 Q2M2H8 1/20 0.32
CA7 P43166 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7561602 0.88 MEN1 (0.42) SMN1; SMN2ALDH1A1CA14ACHECHRNB2
SCHEMBL3030911 0.86 CA1 (0.41) SMN1; SMN2ALDH1A1CA14ACHECA12
SCHEMBL9634932 0.86 CA1 (0.41) SMN1; SMN2ALDH1A1CA14ACHECA12
SCHEMBL12893359 0.84 TSHR (0.38) ALDH1A1ACHECHRNB2CHRNB4CHRNA3
SCHEMBL22098429 0.84 ACHE (0.42) SMN1; SMN2ACHECA1CA2GAA
SCHEMBL2152125 0.82 SMN1; SMN2 (0.38) SMN1; SMN2ALDH1A1CA14CA12TSHR
SCHEMBL20254014 0.80 ALDH1A1 (0.39) SMN1; SMN2ALDH1A1ACHEMEN1KMT2A
SCHEMBL2388844 0.80 ALDH1A1 (0.39) SMN1; SMN2ALDH1A1ACHEMEN1KMT2A
SCHEMBL8942342 0.79 SMN1; SMN2 (0.37) SMN1; SMN2ALDH1A1CA14ACHECA12
SCHEMBL446324 0.78 CA1 (0.47) SMN1; SMN2ALDH1A1ACHETSHRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8524111-B2 CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method HITACHI CHEMICAL COMPANY, LTD. (JP) 2013-09-03 US disclosed
US-20090047786-A1 CMP Abrasive Slurry for Polishing Insulation Film, Polishing Method, and Semiconductor Electronic Part Polished by the Polishing Method RESONAC CORPORATION (JP) 2009-02-19 US disclosed