SCHEMBL4375768

SCHEMBL4375768

CC(O)Cc1ccccc1-c1ccc(-c2ccccc2CC(C)O)cc1

nearest known ligand 0.53

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.53
DPP4 P27487 1/20 0.42
MME P08473 1/20 0.41
ACE P12821 1/20 0.41
CPA1 P15085 1/20 0.41
ACE2 Q9BYF1 1/20 0.41
PDCD1 Q15116 1/20 0.41
CD274 Q9NZQ7 1/20 0.41
KCNA5 P22460 3/20 0.41
KCNH2 Q12809 2/20 0.41
PPARA Q07869 4/20 0.41
PPARG P37231 1/20 0.41
GABRA1 P14867 2/20 0.38
GABRB2 P47870 2/20 0.38
ADRB2 P07550 1/20 0.37
PTGER1 P34995 1/20 0.37
PTGER4 P35408 1/20 0.37
PTGER3 P43115 1/20 0.37
PTGER2 P43116 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5272384 0.94 KMT2A (0.61) KMT2ADPP4MMEACECPA1
SCHEMBL1338716 0.93 KMT2A (0.47) KMT2ADPP4MMEACECPA1
SCHEMBL2870992 0.93 KMT2A (0.47) KMT2ADPP4MMEACECPA1
SCHEMBL17051209 0.83 KMT2A (0.40) KMT2AMMEACECPA1ACE2
SCHEMBL5988255 0.82 GABRA1 (0.46) GABRA1GABRB2
SCHEMBL2862508 0.81 PTGER1 (0.45) KMT2APDCD1CD274GABRA1GABRB2
SCHEMBL11813233 0.80 HSPA5 (0.40) KMT2AKCNH2GABRA1GABRB2
SCHEMBL27527250 0.80 KMT2A (0.59) KMT2ADPP4MMEACECPA1
SCHEMBL28233339 0.80 FFAR1 (0.38) KMT2APDCD1CD274PPARAPPARG
SCHEMBL1337563 0.80 CD274 (0.47) KMT2ADPP4MMEACECPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090075482-A1 PROCESS FOR FORMING A PATTERN INCLUDING ON A SEMICONDUCTOR DEVICE NEC ELECTRONICS CORPORATION (JP) 2009-03-19 US disclosed
US-7479361-B2 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2009-01-20 US disclosed
US-20040259373-A1 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed