SCHEMBL4382295

SCHEMBL4382295

CC(C)(c1ccc(OC2CCCCO2)cc1)c1ccc(OC2CCCCO2)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 4/20 0.45
KMT2A Q03164 4/20 0.45
TP53 P04637 2/20 0.45
MAPT P10636 2/20 0.45
HPGD P15428 2/20 0.45
TSHR P16473 2/20 0.45
ALDH1A1 P00352 2/20 0.45
CYP1A2 P05177 1/20 0.45
PPARG P37231 1/20 0.45
HIF1A Q16665 1/20 0.45
NPY1R P25929 1/20 0.43
NPY2R P49146 1/20 0.43
NPY4R P50391 1/20 0.43
NPY5R Q15761 1/20 0.43
TNK2 Q07912 3/20 0.39
HSD11B1 P28845 1/20 0.38
DHFR P00374 1/20 0.37
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
PSMB1 P20618 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15869174 0.95 MEN1 (0.42) MEN1KMT2ATP53MAPTHPGD
SCHEMBL4376347 0.95 HPGD (0.46) MEN1KMT2ATP53MAPTHPGD
SCHEMBL17694753 0.93 ESR1 (0.46) MEN1KMT2ATP53MAPTHPGD
SCHEMBL7231933 0.90 NPY1R (0.54) MEN1KMT2AMAPTHPGDALDH1A1
SCHEMBL1457107 0.90 NPY1R (0.43) MEN1KMT2ATP53MAPTHPGD
SCHEMBL10952240 0.90 ALDH1A1 (0.50) MEN1KMT2ATP53MAPTHPGD
SCHEMBL15049914 0.88 HPGD (0.47) MEN1KMT2ATP53MAPTHPGD
SCHEMBL3500438 0.88 TNK2 (0.44) MEN1KMT2AHPGDALDH1A1NPY1R
SCHEMBL14646596 0.87 NPY1R (0.44) MEN1KMT2ATP53MAPTHPGD
SCHEMBL5521417 0.87 KCNH2 (0.44) MEN1KMT2ATP53MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090075482-A1 PROCESS FOR FORMING A PATTERN INCLUDING ON A SEMICONDUCTOR DEVICE NEC ELECTRONICS CORPORATION (JP) 2009-03-19 US disclosed
US-7479361-B2 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2009-01-20 US disclosed
US-20040259373-A1 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed
US-6723483-B1 Sulfonium salt compounds WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2004-04-20 US disclosed
US-6586152-B1 Useful as an ingredient of a resist composition used for preparation of semiconductor devices and the like, which comprises a compound shown by the following general formula useful as an ingredient of a resist composition used for WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-07-01 US disclosed
EP-0595361-B1 Method of forming micropatterns with heat resistance MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 1999-03-10 EP disclosed
US-5863701-A POLYMERS FOR PHOTORESISTS USED FOR PRINTING PLATES AND CIRCUIT BOARDS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-01-26 US disclosed
EP-0883163-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD (JP) 1998-12-09 EP disclosed
US-5780566-A Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1998-07-14 US disclosed
US-5741628-A CHEMICAL AMPLIFICATION WHICH GENERATES AN ACID IN RESPONSE TO LASER RADIATION MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-04-21 US disclosed
US-5700620-A POSITIVE PHOTORESIST HAVING HIGH RESOLUTION AND SMALL FILM THICKNESS DEPENDENCE FUJI PHOTO FILM CO., LTD. (JP) 1997-12-23 US disclosed
US-5679500-A FORMING RESIST FILM BY USING A CHEMICAL AMPLIFICATION RESIST WHICH GENERATES AN ACID IN RESPONSE TO LASER LIGHT AND WHICH REACTS WITH THE ACID MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-10-21 US disclosed
US-5658711-A FORMING RESIST FILM CONTAINING BASE GENERATOR, GENERATING BASE BY RADIATION, FORMING METAL OXIDE FILM, ETCHING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-08-19 US disclosed
US-5609982-A Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1997-03-11 US disclosed
EP-0709410-A2 Polymers OCG Microelectronic Materials, Inc. (US) 1996-05-01 EP disclosed
EP-0691674-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-01-10 EP disclosed
EP-0658807-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1995-06-21 EP disclosed
EP-0595361-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1994-05-04 EP disclosed