SCHEMBL438540

SCHEMBL438540

c1ccc(-c2cc(-c3ccccc3)nc(-c3ccccc3)n2)cc1

nearest known ligand 0.75

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 10/20 0.75
KMT2A Q03164 10/20 0.75
HPGD P15428 7/20 0.75
MAPT P10636 7/20 0.75
ALDH1A1 P00352 6/20 0.75
NTSR1 P30989 1/20 0.75
ADORA2A P29274 3/20 0.71
ADORA1 P30542 3/20 0.71
SMN1; SMN2 Q16637 1/20 0.65
L3MBTL1 Q9Y468 1/20 0.65
KDM4E B2RXH2 3/20 0.63
LMNA P02545 2/20 0.63
GLA P06280 1/20 0.62
TDP1 Q9NUW8 2/20 0.61
MAPK1 P28482 1/20 0.61
AGTR1 P30556 1/20 0.58
TSHR P16473 1/20 0.58
ATM Q13315 1/20 0.58
NPSR1 Q6W5P4 1/20 0.56
RXFP1 Q9HBX9 1/20 0.56

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17367827 0.97 MEN1 (0.79) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL17367816 0.97 MEN1 (0.79) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL13113782 0.97 MEN1 (0.72) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL17970040 0.97 MEN1 (0.79) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL9920584 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL12306206 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL10051312 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL17725321 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL13492075 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1
SCHEMBL12306188 0.95 MEN1 (0.76) MEN1KMT2AHPGDMAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 252 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102888208-B Abrasive and substrate polishing method HITACHI CHEMICAL CO LTD 2015-02-25 CN claimed
CN-102690607-B Metal polishing slurry and application thereof HITACHI CHEMICAL CO LTD 2015-02-11 CN claimed
US-20260146199-A1 METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-28 US disclosed
US-12630742-B2 Polishing composition using polishing particles containing basic substance and having high water affinity NISSAN CHEMICAL CORPORATION (JP) 2026-05-19 US disclosed
US-20260117105-A1 POLISHING COMPOSITION HAVING EXCELLENT STORAGE STABILITY AND METHOD FOR PRODUCING SAME NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4698547-A1 COMPOUND, METHOD FOR PREPARING THE COMPOUND, SEMICONDUCTING MATERIAL, ORGANIC ELECTRONIC DEVICE, AND DISPLAY DEVICE Novaled GmbH (DE) 2026-02-25 EP disclosed
US-20260042978-A1 PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO LTD (JP) 2026-02-12 US disclosed
US-20260028553-A1 PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO LTD (JP) 2026-01-29 US disclosed
US-12516420-B2 Chemical solution for removing precious metal, method for manufacturing chemical solution, method for treating substrate, method for manufacturing semiconductor device TOKYO OHKA KOGYO CO., LTD. (JP) 2026-01-06 US disclosed
US-12480077-B2 Aqueous cleaning liquid and method of cleaning electronic device TOKYO OHKA KOGYO CO., LTD. (JP) 2025-11-25 US disclosed
US-20250270474-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR TOKYO OHKA KOGYO CO., LTD. (JP) 2025-08-28 US disclosed
US-6096144-A TREATING WITH ACIDIC OR ALKALINE SOLUTION OF CONJUGATED UNSATURATED COMPOUND WITH AT LEAST 5 BONDS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-01 US disclosed
US-5858571-A TREATING A PULVERIZED HYDROGEN ABSORBING ALLOY WITH A SOLUTION COMPRISING A CONJUGATED UNSATURATED COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-01-12 US disclosed
EP-0872903-A1 Method for making hydrogen storage alloy powder and electrode comprising the alloy powder Shin-Etsu Chemical Co., Ltd. (JP) 1998-10-21 EP disclosed
CN-1006386-B PROCESS FOR PRODUCTION OF VINYL CHLORIDE POLYMER SHINETSU CHEM IND CO (JP) 1990-01-10 CN disclosed
EP-0172427-B1 PROCESS FOR PRODUCTION OF VINYL CHLORIDE POLYMER Shin-Etsu Chemical Co., Ltd. (JP) 1989-07-05 EP disclosed
US-4758639-A Process for production of vinyl polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 1988-07-19 US disclosed
US-4757124-A Suspension or emulsion polymerizing vinyl chloride monomer or mixture of vinyl chloride with vinyl monomer copolymerizable therewith in reactor with walls coated with antiscaling compound containing dye or pigments SHIN-ETSU CHEMICAL CO., LTD. (JP) 1988-07-12 US disclosed
CN-85107531-A Process for producing vinyl chloride polymer 1987-01-21 CN disclosed
EP-0172427-A2 Process for production of vinyl chloride polymer Shin-Etsu Chemical Co., Ltd. (JP) 1986-02-26 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260117105-A1 POLISHING COMPOSITION HAVING EXCELLENT STORAGE STABILITY AND METHOD FOR PRODUCING SAME SRPRA, SEM1, PSMA1 MEN1 4079/4885KMT2A 1298/4885HPGD 3578/4885
US-20260028553-A1 PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TET2, TET1, KDM2A MEN1 3376/4885KMT2A 94/4885HPGD 983/4885
US-20260042978-A1 PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE TWF2, DSTYK, WNK1 MEN1 2656/4885KMT2A 445/4885HPGD 4609/4885
US-20260146199-A1 METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE AS3MT, ASH1L, HMOX2 MEN1 2211/4885KMT2A 467/4885HPGD 3244/4885
US-12630742-B2 Polishing composition using polishing particles containing basic substance and having high water affinity POLR1A, PRMT1, SRRM2 MEN1 3494/4885KMT2A 2625/4885HPGD 2362/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.