SCHEMBL4388580

SCHEMBL4388580

O=C(O)C(C(=O)O)(C(=O)O)n1c(=O)[nH]c(=O)[nH]c1=O

nearest known ligand 0.31

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.31
ALDH1A1 P00352 1/20 0.31
JAK2 O60674 1/20 0.30
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5824335 0.84
SCHEMBL4388173 0.73 APEX1 (0.32) ALDH1A1
SCHEMBL443221 0.72
SCHEMBL109468 0.68 LMNA (0.33) LMNA
SCHEMBL29042185 0.68 LMNA (0.33) LMNA
SCHEMBL6525074 0.68 SMN1; SMN2 (0.30)
SCHEMBL1833220 0.67 LMNA (0.44) LMNA
SCHEMBL27889745 0.67 JAK2 (0.38) LMNAALDH1A1JAK2THRB
SCHEMBL5605625 0.65
SCHEMBL2169311 0.62 DAO (0.41)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-9291381-A None JP disclosed
WO-2023238920-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM TO REDUCE ENVIRONMENTAL IMPACT 日産化学株式会社 2023-12-14 WO disclosed
CN-114424121-A Composition for forming resist underlayer film containing heterocyclic compound 日产化学株式会社 2022-04-29 CN disclosed
US-20210063881-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING A DISULFIDE STRUCTURE NISSAN CHEMICAL CORPORATION (JP) 2021-03-04 US disclosed
CN-112313226-A Resist underlayer film forming composition containing reaction product with glycidyl ester compound 日产化学株式会社 2021-02-02 CN disclosed
CN-111670410-A Composition for forming resist underlayer film having disulfide structure 日产化学株式会社 2020-09-15 CN disclosed
US-7560372-B2 Process for making a semiconductor device having a roughened surface NEC ELECTRONICS CORPORATION (JP) 2009-07-14 US disclosed
US-7268087-B2 Manufacturing method of semiconductor device NEC ELECTRONICS CORPORATION (JP) 2007-09-11 US disclosed
US-7170172-B2 Semiconductor device having a roughened surface NEC ELECTRONICS CORPORATION (JP) 2007-01-30 US disclosed
US-20070015351-A1 Process or making a semiconductor device having a roughened surface NEC ELECTRONICS CORPORATION (JP) 2007-01-18 US disclosed
US-6992050-B2 Stripping agent composition and method of stripping NEC CORPORATION (JP) 2006-01-31 US disclosed
US-20040266171-A1 Manufacturing method of semiconductor device NEC ELECTRONICS CORPORATION 2004-12-30 US disclosed
US-6787480-B2 Manufacturing method of semicondcutor device NEC CORPORATION (JP) 2004-09-07 US disclosed
US-20040029051-A1 Stripping agent composition and method of stripping NEC CORPORATION (JP) 2004-02-12 US disclosed
US-20030111731-A1 Semiconductor device and method for producing the same NEC ELECTRONICS CORPORATION (JP) 2003-06-19 US disclosed
US-20020155702-A1 Manufacturing method of semiconductor device NEC CORPORATION 2002-10-24 US disclosed
JP-H09291381-A WATER-SOLUBLE RUST PREVENTIVE YUSHIRO CHEM IND CO LTD 1997-11-11 JP disclosed
US-4396735-A N-HETEROCYCLIC COMPOUND AND A HETEROCYCLIC ACID HYDRAZIDE ADEKA ARGUS CHEMICAL CO., LTD. (JP) 1983-08-02 US disclosed
US-4362831-A A HINDERED AND HETEROCYCLIC AMINE WITH A THIOALKANOIC ACID AMIDE ADEKA ARGUS CHEMICAL CO., LTD. (JP) 1982-12-07 US disclosed