SCHEMBL4405532

SCHEMBL4405532

COc1cccc2ccc3c(c12)CC=C3

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PPARG P37231 2/20 0.38
RXRA P19793 1/20 0.38
PPARD Q03181 1/20 0.38
PPARA Q07869 1/20 0.38
SLC6A2 P23975 1/20 0.36
HTR2A P28223 1/20 0.36
SLC6A4 P31645 1/20 0.36
HRH1 P35367 1/20 0.36
OPRD1 P41143 1/20 0.36
OPRK1 P41145 1/20 0.36
HTR2B P41595 1/20 0.36
HTR3A P46098 1/20 0.36
SLC6A3 Q01959 1/20 0.36
MCHR1 Q99705 1/20 0.36
KDM4E B2RXH2 3/20 0.35
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
LMNA P02545 1/20 0.35
ATM Q13315 1/20 0.35
ALDH1A1 P00352 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4408121 0.84 PPARG (0.37) PPARGRXRAPPARDPPARAMCHR1
SCHEMBL8766176 0.83 SLC6A2 (0.43) SLC6A2HTR2ASLC6A4HRH1OPRD1
SCHEMBL4403311 0.79 PPARG (0.39) PPARGRXRAPPARDPPARAMCHR1
SCHEMBL31126656 0.76
SCHEMBL2972391 0.75 CYP3A4 (0.34) SLC6A2HTR2ASLC6A4HRH1OPRD1
SCHEMBL4408091 0.74 PPARG (0.38) PPARGRXRAPPARDPPARAMCHR1
SCHEMBL7641202 0.73 TDP1 (0.42) SLC6A2ATMALDH1A1HPGDCYP2A6
SCHEMBL443530 0.72 CA12 (0.55) PPARGRXRAPPARDPPARAMCHR1
SCHEMBL29709902 0.72 CA12 (0.55) PPARGRXRAPPARDPPARAMCHR1
SCHEMBL4438638 0.71 CYP2A6 (0.38) MEN1KMT2ALMNAALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8877422-B2 Resist underlayer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-04 US disclosed
US-20120108071-A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed