Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4403808 | 0.88 | TSHR (0.33) | TSHRHPGD | |
| SCHEMBL4403803 | 0.87 | TSHR (0.34) | TSHRHPGD | |
| SCHEMBL684911 | 0.85 | EPHX2 (0.31) | EPHX2KMT2ASMN1; SMN2 | |
| SCHEMBL14519245 | 0.85 | HSD11B1 (0.32) | EPHX2KMT2ASMN1; SMN2 | |
| SCHEMBL14519250 | 0.84 | HSD11B1 (0.33) | EPHX2 | |
| SCHEMBL525197 | 0.83 | TSHR (0.34) | TSHR | |
| SCHEMBL5356852 | 0.82 | HSD11B1 (0.33) | — | |
| SCHEMBL6322609 | 0.82 | — | — | |
| SCHEMBL4399179 | 0.81 | TSHR (0.33) | TSHRHPGD | |
| SCHEMBL4401593 | 0.81 | TSHR (0.31) | TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |