⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL2402555 | 0.87 | — | — | |
| Zinc Ion SCHEMBL319919 | 0.87 | — | — | |
| Zinc Ion SCHEMBL15813264 | 0.87 | — | — | |
| Zinc Ion SCHEMBL8057600 | 0.82 | GPR39 (0.33) | — | |
| Zinc Ion SCHEMBL21753941 | 0.82 | — | — | |
| Zinc Ion SCHEMBL8057707 | 0.82 | GPR39 (0.33) | — | |
| SCHEMBL454133 | 0.82 | — | — | |
| SCHEMBL21273333 | 0.82 | — | — | |
| Zinc Ion SCHEMBL9522649 | 0.82 | GPR39 (0.33) | — | |
| Zinc Ion SCHEMBL14809810 | 0.82 | GPR39 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 341 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024118599-A1 | MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS | MICRON TECHNOLOGY, INC. (US) | 2024-06-06 | — | — | WO | claimed |
| US-20240188273-A1 | MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS | MICRON TECHNOLOGY, INC. | 2024-06-06 | — | — | US | claimed |
| US-11985806-B2 | Vertical 2-transistor memory cell | MICRON TECHNOLOGY, INC. (US) | 2024-05-14 | — | — | US | claimed |
| US-11950426-B2 | Memory device having 2-transistor vertical memory cell and wrapped data line structure | MICRON TECHNOLOGY, INC. (US) | 2024-04-02 | — | — | US | claimed |
| US-11950402-B2 | Memory device having 2-transistor vertical memory cell and shield structures | MICRON TECHNOLOGY, INC. (US) | 2024-04-02 | — | — | US | claimed |
| US-20240074138-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE READ AND WRITE DATA LINES | MICRON TECHNOLOGY, INC. | 2024-02-29 | — | — | US | claimed |
| US-20240074211-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE | MICRON TECHNOLOGY, INC. | 2024-02-29 | — | — | US | claimed |
| US-20240047356-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLATE | MICRON TECHNOLOGY INC (US) | 2024-02-08 | — | — | US | claimed |
| US-20230422471-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE READ AND WRITE GATES | MICRON TECHNOLOGY INC (US) | 2023-12-28 | — | — | US | claimed |
| US-11776907-B2 | Memory device having 2-transistor vertical memory cell and a common plate | MICRON TECHNOLOGY, INC. (US) | 2023-10-03 | — | — | US | claimed |
| US-8669150-B2 | Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-03-11 | — | — | US | claimed |
| US-8609460-B2 | Semiconductor structure and fabricating method thereof | AU OPTRONICS CORPORATION (TW) | 2013-12-17 | — | — | US | claimed |
| US-20130130451-A1 | Semiconductor Device with Reliable High-Voltage Gate Oxide and Method of Manufacture Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-05-23 | — | — | US | claimed |
| US-8338243-B2 | Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2012-12-25 | — | — | US | claimed |
| CN-101997037-B | Semiconductor structure and manufacturing method thereof | AU OPTRONICS CORP | 2012-07-04 | — | — | CN | claimed |
| US-20120061661-A1 | SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF | AU OPTRONICS CORPORATION (TW) | 2012-03-15 | — | — | US | claimed |
| US-20110212585-A1 | Semiconductor Device with Reliable High-Voltage Gate Oxide and Method of Manufacture Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-09-01 | — | — | US | claimed |
| US-7960810-B2 | Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-06-14 | — | — | US | claimed |
| CN-101997037-A | Semiconductor structure and manufacturing method thereof | AU OPTRONICS CORP | 2011-03-30 | — | — | CN | claimed |
| US-20080054399-A1 | Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2008-03-06 | — | — | US | claimed |