Zinc Ion

Zinc Ion

SCHEMBL319919

[In+3].[N-3].[O-2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL24564 0.87
Zinc Ion SCHEMBL19272482 0.87
Zinc Ion SCHEMBL29395959 0.87
SCHEMBL9079463 0.87
Zinc Ion SCHEMBL504276 0.87
Zinc Ion SCHEMBL29630377 0.87
Zinc Ion SCHEMBL442188 0.87
Zinc Ion SCHEMBL29350087 0.87
Zinc Ion SCHEMBL30088527 0.87
Zinc Ion SCHEMBL2419645 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2337098-B1 Light emitting device LG INNOTEK CO LTD (KR) 2019-06-19 EP claimed
US-20140110734-A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE LG INNOTEK CO., LTD. 2014-04-24 US claimed
US-8564738-B2 Light emitting device and method of manufacture LG INNOTEK CO., LTD. (KR) 2013-10-22 US claimed
US-8455277-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG DISPLAY CO., LTD. (KR) 2013-06-04 US claimed
US-20120315731-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-12-13 US claimed
US-8288771-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTONICS CO., LTD. (KR) 2012-10-16 US claimed
CN-101997037-B Semiconductor structure and manufacturing method thereof AU OPTRONICS CORP 2012-07-04 CN claimed
US-8207534-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-06-26 US claimed
US-20120091492-A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE LG INNOTEK, CO., LTD. 2012-04-19 US claimed
US-8102484-B2 Light emitting device and method of manufacture LG INNOTEK CO., LTD. (KR) 2012-01-24 US claimed
US-20110284857-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG DISPLAY CO., LTD. (KR) 2011-11-24 US claimed
US-20110147780-A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) 2011-06-23 US claimed
EP-2337098-A2 Light emitting device and method of manufacture LG Innotek Co., Ltd. (KR) 2011-06-22 EP claimed
CN-101997037-A Semiconductor structure and manufacturing method thereof AU OPTRONICS CORP 2011-03-30 CN claimed
US-20090224254-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. 2009-09-10 US claimed
US-7527992-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-05-05 US claimed
US-20060108587-A1 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US claimed
CN-109256457-B Light emitting device and light emitting device package 苏州立琻半导体有限公司 2023-07-11 CN disclosed
US-7527992-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-05-05 US disclosed
US-20060108587-A1 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US disclosed