SCHEMBL4453527

SCHEMBL4453527

NC(=O)c1cccc2cccc(OS(=O)(=O)C(F)(F)F)c12

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
CTNNB1 P35222 1/20 0.40
FABP1 P07148 1/20 0.38
KDM4E B2RXH2 3/20 0.36
ALDH1A1 P00352 2/20 0.36
GAA P10253 1/20 0.36
PARP1 P09874 5/20 0.36
PDK2 Q15119 1/20 0.36
HSD17B10 Q99714 2/20 0.36
MAPT P10636 2/20 0.36
IRAK4 Q9NWZ3 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
PDPK1 O15530 1/20 0.36
HPGD P15428 1/20 0.35
TSHR P16473 1/20 0.35
MAPK8 P45983 1/20 0.34
MAPK10 P53779 1/20 0.34
PLK4 O00444 1/20 0.34
CHEK1 O14757 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3653595 0.83 CTNNB1 (0.53) MEN1KMT2ACTNNB1KDM4EALDH1A1
SCHEMBL15671607 0.81 KMT2A (0.43) MEN1KMT2ACTNNB1FABP1KDM4E
Trifluoromethanesulfonic Acid SCHEMBL19554410 0.79 PDK2 (0.44) KDM4EALDH1A1GAAPARP1PDK2
SCHEMBL4456112 0.78 IRAK4 (0.52) MEN1KMT2ACTNNB1KDM4EALDH1A1
SCHEMBL27845010 0.78 PDK2 (0.37) KDM4EALDH1A1GAAPARP1PDK2
SCHEMBL25323447 0.77 FABP1 (0.39) MEN1KMT2AFABP1KDM4EALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL29163054 0.77 HSD17B10 (0.49) KDM4EALDH1A1GAAPARP1PDK2
SCHEMBL29428702 0.76 FABP1 (0.38) FABP1
SCHEMBL19948204 0.76 FABP1 (0.38) FABP1
SCHEMBL17080387 0.75 FABP1 (0.40) MEN1KMT2AFABP1KDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023195202-A1 HYBRID BONDING INSULATION FILM-FORMING MATERIAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE HDマイクロシステムズ株式会社 2023-10-12 WO disclosed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed