SCHEMBL4524604

SCHEMBL4524604

CCCCCCOc1ccc(C(C)(C)C)cc1S(=O)(=O)O

nearest known ligand 0.52

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.52
SMN1; SMN2 Q16637 2/20 0.46
KDM4E B2RXH2 1/20 0.46
GAA P10253 1/20 0.46
ESR1 P03372 2/20 0.46
THRA P10827 2/20 0.46
THRB P10828 2/20 0.46
TRPV1 Q8NER1 2/20 0.45
ALDH1A1 P00352 3/20 0.43
POLB P06746 1/20 0.43
HTT P42858 1/20 0.43
NPSR1 Q6W5P4 2/20 0.43
S1PR1 P21453 1/20 0.42
HSD17B10 Q99714 1/20 0.42
MAPT P10636 1/20 0.42
MAPK1 P28482 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7738352 0.88 S1PR3 (0.49) S1PR3SMN1; SMN2ESR1THRATHRB
SCHEMBL5861695 0.87 ALDH1A1 (0.44) S1PR3SMN1; SMN2KDM4EGAAESR1
Hydrochloric Acid SCHEMBL8314763 0.87 S1PR3 (0.48) S1PR3SMN1; SMN2ESR1THRATHRB
SCHEMBL4528105 0.83 S1PR3 (0.54) S1PR3KDM4EGAAESR1THRA
SCHEMBL4528057 0.83 S1PR3 (0.54) S1PR3KDM4EGAAESR1THRA
SCHEMBL4540961 0.83 S1PR3 (0.54) S1PR3KDM4EGAAESR1THRA
SCHEMBL5862968 0.82 ESR1 (0.41) S1PR3SMN1; SMN2KDM4EGAAESR1
SCHEMBL5861568 0.82 ESR1 (0.41) S1PR3SMN1; SMN2KDM4EGAAESR1
SCHEMBL5861729 0.82 ESR1 (0.41) S1PR3SMN1; SMN2KDM4EGAAESR1
SCHEMBL5862347 0.82 ESR1 (0.41) S1PR3SMN1; SMN2KDM4EGAAESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed