SCHEMBL4527770

SCHEMBL4527770

CCCCCCOc1ccc(CC)cc1S(=O)(=O)O

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 3/20 0.53
THRA P10827 1/20 0.46
THRB P10828 1/20 0.46
PTPN11 Q06124 2/20 0.44
PTPN1 P18031 1/20 0.44
PTPN6 P29350 1/20 0.44
S1PR1 P21453 3/20 0.43
ALDH1A1 P00352 1/20 0.42
HPGD P15428 1/20 0.42
SMPD1 P17405 3/20 0.41
S1PR2 O95136 2/20 0.41
LPAR2 Q9HBW0 2/20 0.41
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
TDP1 Q9NUW8 1/20 0.40
NR1I2 O75469 1/20 0.40
LMNA P02545 1/20 0.40
CHRM2 P08172 1/20 0.40
CYP3A4 P08684 1/20 0.40
ADRA2A P08913 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4528105 0.84 S1PR3 (0.54) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL4528057 0.84 S1PR3 (0.54) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL4540961 0.84 S1PR3 (0.54) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL3444651 0.83 S1PR3 (0.53) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL156474 0.83 S1PR3 (0.53) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL156473 0.83 S1PR3 (0.53) S1PR3THRATHRBPTPN11PTPN1
SCHEMBL3445240 0.83 S1PR3 (0.53) S1PR3THRATHRBPTPN11ALDH1A1
SCHEMBL5862958 0.82 S1PR3 (0.42) S1PR3THRATHRBPTPN11PTPN1
SCHEMBL5862337 0.82 S1PR3 (0.42) S1PR3THRATHRBPTPN11PTPN1
SCHEMBL5861981 0.82 S1PR3 (0.42) S1PR3THRATHRBPTPN11PTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed