SCHEMBL4535304

SCHEMBL4535304

CCCCOc1ccc(S(=O)(=O)O)c(C)c1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PDIA6 Q15084 1/20 0.62
NPC1 O15118 2/20 0.47
RAB9A P51151 2/20 0.47
MEN1 O00255 1/20 0.47
ALDH1A1 P00352 1/20 0.47
GAA P10253 1/20 0.47
MAPT P10636 1/20 0.47
KMT2A Q03164 1/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
CA12 O43570 2/20 0.46
CA1 P00915 2/20 0.46
CA2 P00918 2/20 0.46
CA7 P43166 2/20 0.46
CA9 Q16790 2/20 0.46
TSHR P16473 1/20 0.46
THRA P10827 2/20 0.45
THRB P10828 2/20 0.45
PPARG P37231 1/20 0.42
PPARA Q07869 1/20 0.42
LTA4H P09960 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4532951 0.97 PDIA6 (0.63) PDIA6NPC1RAB9AMEN1ALDH1A1
SCHEMBL4539504 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4535318 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4541017 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4524593 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4537390 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4527237 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4537340 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4539263 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA
SCHEMBL4530528 0.95 PDIA6 (0.61) PDIA6NPC1RAB9ATSHRTHRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed