Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC2A1 | P11166 | 1/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.42 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 3/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.41 |
| ▸ | RAB9A | P51151 | 2/20 | 0.41 |
| ▸ | NPC1 | O15118 | 2/20 | 0.41 |
| ▸ | SLC13A5 | Q86YT5 | 2/20 | 0.39 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.38 |
| ▸ | HDAC6 | Q9UBN7 | 3/20 | 0.38 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.38 |
| ▸ | TSHR | P16473 | 2/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.38 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.38 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.38 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18130270 | 0.80 | CYP2C19 (0.46) | ALDH1A1GAAL3MBTL1CYP2C19HIF1A | |
| SCHEMBL8018070 | 0.79 | CYP2C19 (0.57) | ALDH1A1CYP2C19HIF1AMAPTSLC13A5 | |
| SCHEMBL28038488 | 0.78 | ESR1 (0.46) | ALDH1A1CYP2C19HIF1AHPGDSLC13A5 | |
| SCHEMBL5501661 | 0.77 | SLC2A1 (0.43) | SLC2A1ALDH1A1GAAL3MBTL1HPGD | |
| SCHEMBL472282 | 0.74 | SLC2A1 (0.57) | SLC2A1ALDH1A1GAAL3MBTL1HPGD | |
| SCHEMBL1804466 | 0.73 | RAB9A (0.53) | SLC2A1ALDH1A1HPGDMAPTRAB9A | |
| SCHEMBL28132726 | 0.73 | CYP2C19 (0.41) | ALDH1A1CYP2C19HIF1AHPGDRAB9A | |
| SCHEMBL4678223 | 0.72 | SLC2A1 (0.54) | SLC2A1ALDH1A1GAAL3MBTL1HPGD | |
| SCHEMBL10473429 | 0.72 | SLC2A1 (0.54) | SLC2A1ALDH1A1GAAL3MBTL1HPGD | |
| SCHEMBL10471588 | 0.71 | RAB9A (0.52) | SLC2A1ALDH1A1GAAL3MBTL1HPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 134 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2202577-B1 | Chemically amplified positive resist composition and resist patterning process | SHINETSU CHEMICAL CO (JP) | 2014-08-27 | — | — | EP | claimed |
| EP-2492746-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2019-11-20 | — | — | EP | disclosed |
| EP-2492747-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-11-07 | — | — | EP | disclosed |
| EP-2270596-B1 | Positive resist compostion and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-07-25 | — | — | EP | disclosed |
| CN-104330955-B | For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings | 信越化学工业株式会社 | 2018-05-25 | — | — | CN | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| CN-104199255-B | Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings | 信越化学工业株式会社 | 2018-03-13 | — | — | CN | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| EP-2360525-B1 | Chemically amplified positive resist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360527-B1 | Patterning process using EB or EUV lithography | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2253996-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-11-24 | — | — | EP | disclosed |
| CN-101893824-A | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHINETSU CHEMICAL CO | 2010-11-24 | — | — | CN | disclosed |
| US-20100291484-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| EP-2244124-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244125-A2 | Resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244126-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| US-20100167207-A1 | Chemically amplified positive resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-2202577-A1 | Chemically amplified positive resist composition and resist patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-30 | — | — | EP | disclosed |
| EP-2146245-A2 | Resist composition and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-01-20 | — | — | EP | disclosed |
| US-20100009299-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100009299-A1 | Resist composition and patterning process | ARF4, FGFR2, ARF5 | SLC2A1 4581/4885ALDH1A1 2706/4885GAA 4147/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.