SCHEMBL472297

SCHEMBL472297

CCN(CC)c1ccc(C(=O)O)c(C)c1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 5/20 0.57
MEN1 O00255 4/20 0.57
KMT2A Q03164 4/20 0.57
L3MBTL1 Q9Y468 3/20 0.57
S100B P04271 1/20 0.53
ALDH1A1 P00352 5/20 0.52
HSD17B10 Q99714 4/20 0.52
ALOX15 P16050 3/20 0.52
HPGD P15428 2/20 0.52
KDM4E B2RXH2 2/20 0.52
SLC16A3 O15427 1/20 0.52
SLC16A1 P53985 1/20 0.52
MAPT P10636 6/20 0.46
MAPK1 P28482 4/20 0.46
LMNA P02545 3/20 0.46
NPC1 O15118 2/20 0.46
RAB9A P51151 2/20 0.46
GFER P55789 4/20 0.45
HTT P42858 3/20 0.45
CYP2C19 P33261 3/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9684802 0.87 S100B (0.55) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL7482214 0.86 SMN1; SMN2 (0.75) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL4372902 0.85 MEN1 (0.65) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL3226363 0.84 S100B (0.56) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL12765205 0.83 S100B (0.50) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL11482153 0.83 S100B (0.50) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL503775 0.82 MEN1 (0.75) SMN1; SMN2MEN1KMT2AL3MBTL1ALDH1A1
SCHEMBL1814072 0.82 MEN1 (0.57) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL27714618 0.81 MAOB (0.58) SMN1; SMN2MEN1KMT2AL3MBTL1S100B
SCHEMBL30204903 0.81 EGFR (0.49) SMN1; SMN2MEN1KMT2AL3MBTL1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 117 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
US-20100167207-A1 Chemically amplified positive resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-01 US disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed
CN-101625524-A Photoresist composition and pattern forming method SHINETSU CHEMICAL CO 2010-01-13 CN disclosed
US-5091033-A ADHESIVE FOR CERAMICS AND PROCESSES FOR THE BONDING OF CERAMICS USING SAME MITSUI SEKIYU KAGAKU KOGYO KABUSHIKI KAISHA (JP) 1992-02-25 US disclosed
EP-0252603-A2 Adhesives for ceramics and processes for the bonding of ceramics using same MITSUI SEKIYU KAGAKU KOGYO KABUSHIKI KAISHA (JP) 1988-01-13 EP disclosed
US-4439519-A NONDIFFUSING COUPLER FUJI PHOTO FILM CO., LTD. (JP) 1984-03-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 SMN1; SMN2 4381/4885MEN1 2928/4885KMT2A 81/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.