SCHEMBL472306

SCHEMBL472306

O=C(O)C(O)C(C(=O)O)N1CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DPP7 Q9UHL4 1/20 0.42
GAA P10253 1/20 0.40
TSHR P16473 3/20 0.39
RAB9A P51151 1/20 0.38
LMNA P02545 3/20 0.37
FDPS P14324 2/20 0.37
CYP2C19 P33261 4/20 0.35
NFKB1 P19838 1/20 0.35
ALDH1A1 P00352 6/20 0.35
KMT2A Q03164 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
MAPT P10636 1/20 0.35
HTT P42858 1/20 0.35
NPC1 O15118 1/20 0.32
CYP1A2 P05177 3/20 0.32
CYP2C9 P11712 3/20 0.32
HPGD P15428 1/20 0.32
MAPK1 P28482 1/20 0.32
MEN1 O00255 1/20 0.32
CYP3A4 P08684 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17307370 0.98 TSHR (0.41) DPP7GAATSHRRAB9ALMNA
SCHEMBL26986914 0.85 DPP7 (0.48) DPP7GAATSHRRAB9ALMNA
SCHEMBL28280294 0.80 RAB9A (0.50) DPP7GAATSHRRAB9ALMNA
SCHEMBL4936105 0.77 RAB9A (0.62) DPP7GAARAB9ALMNAFDPS
SCHEMBL4936117 0.77 RAB9A (0.62) DPP7GAARAB9ALMNAFDPS
SCHEMBL4940630 0.74 RAB9A (0.64) DPP7GAARAB9ALMNAFDPS
SCHEMBL4940641 0.74 RAB9A (0.64) DPP7GAARAB9ALMNAFDPS
SCHEMBL1503488 0.74 DPP7 (0.48) DPP7GAARAB9ALMNAFDPS
SCHEMBL15415243 0.73 DPP7 (0.47) DPP7GAATSHRLMNAFDPS
Hydrochloric Acid SCHEMBL1503596 0.72 DPP7 (0.47) DPP7GAARAB9ALMNAFDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2202577-B1 Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO (JP) 2014-08-27 EP claimed
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
EP-2256552-A1 Negative resist composition and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
EP-2256551-A1 Chemically amplified resist compositon and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
EP-2253996-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-11-24 EP disclosed
US-20100291484-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-18 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 DPP7 4858/4885GAA 4147/4885TSHR 2319/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.