Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4269676 | 0.82 | TSHR (0.38) | TSHR | |
| SCHEMBL4268932 | 0.77 | — | — | |
| SCHEMBL232674 | 0.77 | TSHR (0.30) | TSHR | |
| SCHEMBL4267760 | 0.74 | TSHR (0.33) | TSHR | |
| SCHEMBL2761644 | 0.74 | TSHR (0.33) | TSHR | |
| SCHEMBL2376285 | 0.72 | DNM1 (0.38) | TSHR | |
| SCHEMBL4273740 | 0.72 | TSHR (0.37) | TSHR | |
| SCHEMBL6949648 | 0.71 | — | — | |
| SCHEMBL4270402 | 0.70 | TSHR (0.36) | TSHR | |
| SCHEMBL4276525 | 0.70 | OPRM1 (0.46) | TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3385791-B1 | PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, LAMINATE FILM, AND UPPER LAYER FILM FORMATION COMPOSITION | FUJIFILM CORP (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11249395-B2 | Pattern forming method, method for manufacturing electronic device, laminate film, and composition for forming upper layer film | FUJIFILM CORPORATION (JP) | 2022-02-15 | — | — | US | disclosed |
| CN-108292097-B | Pattern forming method, method for manufacturing electronic device, laminated film, and composition for forming upper layer film | 富士胶片株式会社 | 2021-10-08 | — | — | CN | disclosed |
| CN-106796401-B | Pattern forming method, composition for forming upper layer film, resist pattern, and method for manufacturing electronic device | 富士胶片株式会社 | 2021-06-29 | — | — | CN | disclosed |
| CN-107407887-B | Composition for forming upper layer film, pattern forming method, resist pattern, and method for manufacturing electronic device | 富士胶片株式会社 | 2021-06-08 | — | — | CN | disclosed |
| US-10761426-B2 | Pattern forming method, method for manufacturing electronic device, and laminate | FUJIFILM CORPORATION (JP) | 2020-09-01 | — | — | US | disclosed |
| US-10678132-B2 | Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin | FUJIFILM CORPORATION (JP) | 2020-06-09 | — | — | US | disclosed |
| US-10663864-B2 | Pattern forming method, method for manufacturing electronic device, and laminate | FUJIFILM CORPORATION (JP) | 2020-05-26 | — | — | US | disclosed |
| CN-106605174-B | Negative pattern forming method, composition for forming protective film, and method for manufacturing electronic device | 富士胶片株式会社 | 2020-05-19 | — | — | CN | disclosed |
| US-10578968-B2 | Pattern forming method, resist pattern, and process for producing electronic device | FUJIFILM CORPORATION (JP) | 2020-03-03 | — | — | US | disclosed |
| US-7550250-B2 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2009-06-23 | — | — | US | disclosed |
| US-20090098485-A1 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| EP-1975714-A1 | Positive resist composition and pattern forming method | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| EP-1970760-A1 | Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin | FUJIFILM Corporation (JP) | 2008-09-17 | — | — | EP | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1903394-A1 | Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition | FUJIFILM Corporation (JP) | 2008-03-26 | — | — | EP | disclosed |
| EP-1804120-A1 | Positive resist composition and pattern forming method using the same | Fujifilm Corporation (JP) | 2007-07-04 | — | — | EP | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |