SCHEMBL47304

SCHEMBL47304

C=C(C)C(=O)OC1(C(C)C)CCCC1

nearest known ligand 0.38

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.38
ALDH1A1 P00352 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL686090 0.98 TSHR (0.37) TSHRALDH1A1
SCHEMBL685731 0.98 TSHR (0.37) TSHRALDH1A1
SCHEMBL685726 0.98 TSHR (0.37) TSHRALDH1A1
SCHEMBL674145 0.92 TSHR (0.41) TSHRALDH1A1
SCHEMBL17247223 0.84 TSHR (0.41) TSHRALDH1A1
SCHEMBL17247248 0.83 TSHR (0.40) TSHRALDH1A1
SCHEMBL13172057 0.82 TSHR (0.38) TSHRALDH1A1
SCHEMBL7665648 0.82 TSHR (0.34) TSHRALDH1A1
SCHEMBL4401703 0.82 TSHR (0.34) TSHRALDH1A1
SCHEMBL4399277 0.82 TSHR (0.38) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1030 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119613607-A Preparation method of 193nm photoresist resin 江苏集萃光敏电子材料研究所有限公司 2025-03-14 CN claimed
CN-115542665-B Positive chemical amplification type photoresist and application method thereof 徐州博康信息化学品有限公司 2025-03-07 CN claimed
CN-115542665-A Positive chemical amplification type photoresist and using method thereof 徐州博康信息化学品有限公司 2022-12-30 CN claimed
US-12498637-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-16 US disclosed
US-12276911-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-04-15 US disclosed
CN-119613607-A Preparation method of 193nm photoresist resin 江苏集萃光敏电子材料研究所有限公司 2025-03-14 CN disclosed
CN-115542665-B Positive chemical amplification type photoresist and application method thereof 徐州博康信息化学品有限公司 2025-03-07 CN disclosed
US-12216401-B2 Sulfonium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-04 US disclosed
CN-119087744-A Immersion photoresist composition 万华化学集团股份有限公司 2024-12-06 CN disclosed
US-20240329529-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-10-03 US disclosed
US-20240241440-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12216401-B2 Sulfonium salt, chemically amplified resist composition, and patterning process ETV6, KAT5, PKD1 TSHR 3390/4885ALDH1A1 2965/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.