SCHEMBL47307

SCHEMBL47307

C=C(C)C(=O)OC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.31

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.31
NPC1 O15118 1/20 0.31
POLB P06746 1/20 0.31
MAPT P10636 1/20 0.31
PKM P14618 1/20 0.31
HTT P42858 1/20 0.31
RECQL P46063 1/20 0.31
RAB9A P51151 1/20 0.31
ATM Q13315 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9975636 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL13088042 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL19719271 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL22840948 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL15166539 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL14121550 0.91
SCHEMBL74605 0.89 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL19050201 0.89 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL16905096 0.89
SCHEMBL16605692 0.88 ALDH1A1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2730 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12461443-B2 Photoresist resin, method for producing photoresist resin, photoresist resin composition, and method for forming pattern DAICEL CORPORATION (JP) 2025-11-04 US disclosed
WO-2025106697-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO disclosed
US-20250116933-A1 MULTIBLOCK COPOLYMERS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-04-10 US disclosed
CN-119285842-A Fluorine-containing polymer, preparation method thereof and ArF immersed photoresist prepared from fluorine-containing polymer 瑞红(苏州)电子化学品股份有限公司 2025-01-10 CN disclosed
US-20240369924-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
US-20240369925-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
US-20240361693-A1 THINNER COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES USING SAID THINNER COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-10-31 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
WO-2024150553-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND JSR株式会社 2024-07-18 WO disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
EP-1352904-A1 (METH)ACRYLATE ESTERS, STARTING ALCOHOLS FOR THE PREPARATION THEREOF, PROCESSES FOR PREPARING BOTH, POLYMERS OF THE ESTERS, CHEMICALLY AMPLIFIABLE RESIST COMPOSITIONS, AND METHOD FOR FORMING PATTERNS Mitsubishi Rayon Co., Ltd. (JP) 2003-10-15 EP disclosed
US-20030148210-A1 Polymer for photoresist and resin compositions therefor DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2003-08-07 US disclosed
US-20030148214-A1 Resins for resists and chemically amplifiable resist compositions MITSUBISHI CHEMICAL CORPORATION (JP) 2003-08-07 US disclosed
EP-1304340-A1 RESINS FOR RESISTS AND CHEMICALLY AMPLIFIABLE RESIST COMPOSITIONS Mitsubishi Rayon Co., Ltd. (JP) 2003-04-23 EP disclosed
US-6548220-B2 Containing acid generator SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-04-15 US disclosed
US-6492089-B2 POLYMER BEARING CYCLIC SILICON-CONTAINING GROUPS SUCH AS 1,4,4-TRIMETHYL-4-SILACYCLOHEXYL METHACRYLATE; USE AS CHEMICALLY AMPLIFIED POSITIVE RESIST SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-10 US disclosed
US-20020146641-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
EP-1207423-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-05-22 EP disclosed
US-20020015913-A1 Chemical amplifying type positive resist composition and sulfonium salt SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-02-07 US disclosed
EP-1167349-A1 Chemical amplifying type positive resist composition and sulfonium salt SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-01-02 EP disclosed