SCHEMBL9975636

SCHEMBL9975636

C=C(C)C(=O)OC1C2OC(=O)[C@@H]3C[C@@H]1CC23

nearest known ligand 0.31

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.31
NPC1 O15118 1/20 0.31
POLB P06746 1/20 0.31
MAPT P10636 1/20 0.31
PKM P14618 1/20 0.31
HTT P42858 1/20 0.31
RECQL P46063 1/20 0.31
RAB9A P51151 1/20 0.31
ATM Q13315 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13088042 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL19719271 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL22840948 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL47307 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL15166539 1.00 KDM4E (0.31) KDM4ENPC1POLBMAPTPKM
SCHEMBL14121550 0.91
SCHEMBL74605 0.89 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL19050201 0.89 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL16905096 0.89
SCHEMBL16605692 0.88 ALDH1A1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160274464-A1 METHOD OF RECOVERING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2016-09-22 US disclosed
US-20160109801-A1 UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD JSR CORPORATION (JP) 2016-04-21 US disclosed
US-20150370170-A1 PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-12-24 US disclosed
US-9034559-B2 Pattern-forming method, and radiation-sensitive composition JSR CORPORATION (JP) 2015-05-19 US disclosed
US-20130230804-A1 PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2013-09-05 US disclosed
US-8232041-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-31 US disclosed
US-8202678-B2 Wet developable bottom antireflective coating composition and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-19 US disclosed
US-20100209848-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-08-19 US disclosed
US-20090291392-A1 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-11-26 US disclosed
US-7452655-B2 Acrylic copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2008-11-18 US disclosed