Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 2/20 | 0.84 |
| ▸ | CA1 | P00915 | 7/20 | 0.56 |
| ▸ | CA2 | P00918 | 7/20 | 0.56 |
| ▸ | CA12 | O43570 | 3/20 | 0.56 |
| ▸ | CA14 | Q9ULX7 | 3/20 | 0.56 |
| ▸ | CA7 | P43166 | 2/20 | 0.56 |
| ▸ | PPARA | Q07869 | 4/20 | 0.43 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | ADH1B | P00325 | 1/20 | 0.34 |
| ▸ | ADH1C | P00326 | 1/20 | 0.34 |
| ▸ | ADH1A | P07327 | 1/20 | 0.34 |
| ▸ | ADH7 | P40394 | 1/20 | 0.34 |
| ▸ | CA9 | Q16790 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL7870216 | 0.98 | EPHX1 (0.81) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1321109 | 0.93 | EPHX1 (0.96) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1318738 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1321631 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1319977 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1319861 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL15116347 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1318327 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL1319040 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 | |
| SCHEMBL15116365 | 0.91 | EPHX1 (1.00) | EPHX1CA1CA2CA12CA14 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 454 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119137096-A | Trifluoromethanesulfonyl a composition of the agent trifluoromethanesulfonyl oxy compounds or Process for producing trifluoromethanesulfonyl compound | 中央硝子株式会社 | 2024-12-13 | — | — | CN | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| WO-2011034176-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | JSR株式会社 (JP) | 2011-03-24 | — | — | WO | disclosed |
| US-20100285405-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100285405-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-11-11 | — | — | US | disclosed |
| US-7759047-B2 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-20 | — | — | US | disclosed |
| US-7670750-B2 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20090208867-A1 | Resist Composition, Resist Protective Coating Composition, and Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20080085466-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20070275326-A1 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-4293441-A | FLUOROALIPHATICSULFONAMIDO PHOSPHONIC ACID, ETHYLENE GLYCOL OR PROPYLENE GLYCOL | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1981-10-06 | — | — | US | disclosed |
| US-4202706-A | Corrosion resistance treatment of aluminum with N-alkyl-fluoroaliphaticsulfonamidophosphonic acids and salts thereof | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1980-05-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, TERB1, TRRAP | EPHX1 264/4885CA1 2140/4885CA2 3808/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | EPHX1 4516/4885CA1 1150/4885CA2 1207/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.