SCHEMBL47315

SCHEMBL47315

C=C(C)C(=O)OC12CC3CC(C1)CC(OC(=O)C(F)(F)F)(C3)C2

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.32
CYP19A1 P11511 1/20 0.32
SCN9A Q15858 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12266114 0.91
SCHEMBL25454343 0.90 CYP17A1 (0.34) CYP17A1CYP19A1
SCHEMBL12522090 0.89 CYP17A1 (0.31) CYP17A1CYP19A1
SCHEMBL737596 0.88 ALDH1A1 (0.35) CYP19A1
SCHEMBL12447419 0.87
SCHEMBL14632729 0.87 CYP17A1 (0.30) CYP17A1CYP19A1
SCHEMBL10264670 0.87 CYP17A1 (0.30) CYP17A1CYP19A1
SCHEMBL18314258 0.86 ALDH1A1 (0.34)
SCHEMBL12266599 0.86 ALDH1A1 (0.31) SCN9A
SCHEMBL25494130 0.85 CYP17A1 (0.32) CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-20200409262-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-10725380-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-07-28 US disclosed
US-20180088073-A1 GAS SENSOR AND METHOD OF MANUFACTURE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-03-29 US disclosed
US-20180031975-A1 PATTERN TREATMENT METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-02-01 US disclosed
US-20180031975-A1 PATTERN TREATMENT METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-02-01 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9703203-B2 Compositions and methods for pattern treatment DOW GLOBAL TECHNOLOGIES LLC (US) 2017-07-11 US disclosed
US-20120100483-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120100483-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120100482-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120100482-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
WO-2012002470-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR株式会社 (JP) 2012-01-05 WO disclosed
WO-2011125684-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND COMPOUND JSR株式会社 (JP) 2011-10-13 WO disclosed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10725380-B2 Compound, resin, resist composition and method for producing resist pattern C1R, C9, RER1 CYP17A1 1829/4885CYP19A1 957/4885SCN9A 3385/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.