Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 4/20 | 0.48 |
| ▸ | CYP17A1 | P05093 | 3/20 | 0.48 |
| ▸ | HSD11B1 | P28845 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14258823 | 0.91 | CYP19A1 (0.39) | CYP19A1CYP17A1 | |
| SCHEMBL107999 | 0.90 | CYP17A1 (0.43) | CYP19A1CYP17A1 | |
| SCHEMBL14750837 | 0.88 | CYP17A1 (0.44) | CYP19A1CYP17A1 | |
| SCHEMBL17449450 | 0.87 | CYP17A1 (0.46) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL12603697 | 0.87 | CYP17A1 (0.48) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL23809795 | 0.85 | CYP17A1 (0.47) | CYP19A1CYP17A1 | |
| SCHEMBL14479570 | 0.85 | CYP19A1 (0.38) | CYP19A1CYP17A1 | |
| SCHEMBL47422 | 0.85 | CYP17A1 (0.41) | CYP19A1CYP17A1 | |
| SCHEMBL22643370 | 0.85 | CYP19A1 (0.38) | CYP19A1CYP17A1 | |
| SCHEMBL17281194 | 0.85 | CYP17A1 (0.43) | CYP19A1CYP17A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2017 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240241444-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-07-18 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240027908-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-20070026341-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-02-01 | — | — | US | disclosed |
| US-7169530-B2 | Polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-01-30 | — | — | US | disclosed |
| US-7166418-B2 | Selectively irradiating resist film with high energy beams of light such as krypton fluoride, argon fluoride, fluorine, krypton, argon or soft X-ray laser ; developing polymer with unsaturated sulfonamide units | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-01-23 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |
| US-7160669-B2 | Chemical amplification type resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
| US-7157205-B2 | Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-7157205-B2 | Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-7157207-B2 | Polymer, resist material and patterning processing | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |