SCHEMBL4739740

SCHEMBL4739740

CCCOC(=O)CC1CC2C=CC1C2

nearest known ligand 0.40

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 8/20 0.40
ALDH1A1 P00352 4/20 0.40
MIF P14174 1/20 0.35
EPHX2 P34913 2/20 0.35
MAPT P10636 2/20 0.34
POLB P06746 1/20 0.34
ALOX15 P16050 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
LMNA P02545 1/20 0.33
PKM P14618 1/20 0.33
MAPK1 P28482 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22263800 0.91 KDM4E (0.38) KDM4EALDH1A1MIFEPHX2POLB
SCHEMBL22263786 0.90 NAAA (0.44) KDM4EALDH1A1EPHX2
SCHEMBL22263863 0.88 NAAA (0.46) KDM4EALDH1A1EPHX2LMNA
SCHEMBL22263750 0.88 NAAA (0.46) KDM4EALDH1A1EPHX2LMNA
SCHEMBL1089531 0.87 KDM4E (0.41) KDM4EALDH1A1EPHX2MAPTPOLB
SCHEMBL13888501 0.84 EPHX2 (0.35) KDM4EALDH1A1EPHX2MAPTPOLB
SCHEMBL5872938 0.80 KDM4E (0.33) KDM4EALDH1A1EPHX2POLBALOX15
SCHEMBL1087617 0.80 EPHX2 (0.41) KDM4EALDH1A1EPHX2MAPTPOLB
SCHEMBL5359702 0.80 KDM4E (0.39) KDM4EALDH1A1EPHX2MAPTPOLB
SCHEMBL4783612 0.79 KDM4E (0.42) KDM4EALDH1A1EPHX2MAPTPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11886119-B2 Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2024-01-30 US disclosed
CN-110709774-B Underlayer film forming material, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2023-12-08 CN disclosed
US-20230185195-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2023-06-15 US disclosed
US-11599025-B2 Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2023-03-07 US disclosed
US-20200264511-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-08-20 US disclosed
EP-3693793-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING RESIST UNDERLAYER FILM, AND LAYERED PRODUCT Mitsui Chemicals, Inc. (JP) 2020-08-12 EP disclosed
US-20200241419-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-07-30 US disclosed
CN-111183395-A Resin material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-05-19 CN disclosed
CN-110709774-A Material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-01-17 CN disclosed
US-20080199805-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS. U.S.A., INC. 2008-08-21 US disclosed
WO-2008098189-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-14 WO disclosed