Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4836664 | 0.85 | — | — | |
| SCHEMBL17123455 | 0.82 | — | — | |
| SCHEMBL190883 | 0.75 | — | — | |
| SCHEMBL26676530 | 0.75 | — | — | |
| SCHEMBL273377 | 0.70 | ALDH1A1 (0.36) | ALDH1A1TSHRTDP1 | |
| SCHEMBL24799608 | 0.69 | — | — | |
| SCHEMBL26798619 | 0.69 | — | — | |
| SCHEMBL16588443 | 0.69 | — | — | |
| SCHEMBL5583492 | 0.69 | — | — | |
| SCHEMBL13089205 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 176 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240052490-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2024-02-15 | — | — | US | claimed |
| EP-4018015-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | Versum Materials US, LLC (US) | 2022-06-29 | — | — | EP | claimed |
| CN-114556527-A | Monoalkoxysilanes and dialkoxysilanes and dense organosilica films prepared therefrom | 弗萨姆材料美国有限责任公司 | 2022-05-27 | — | — | CN | claimed |
| EP-3339311-B1 | VOLATILE MONOAMINO-DIALKOXYSILANES AND THEIR USE FOR CREATING SILICON-CONTAINING FILMS | VERSUM MAT US LLC (US) | 2021-07-21 | — | — | EP | claimed |
| WO-2021050798-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2021-03-18 | — | — | WO | claimed |
| EP-3339311-A1 | VOLATILE MONOAMINO-DIALKOXYSILANES AND THEIR USE FOR CREATING SILICON-CONTAINING FILMS | Versum Materials US, LLC (US) | 2018-06-27 | — | — | EP | claimed |
| EP-2620440-B1 | Volatile monoamino-dialkoxysilanes and their use for creating silicon-containing films | VERSUM MAT US LLC (US) | 2018-04-04 | — | — | EP | claimed |
| EP-2876099-B1 | Norbornadiene purification method | AIR LIQUIDE (FR) | 2017-11-15 | — | — | EP | claimed |
| EP-2412011-B1 | CHEMICAL VAPOR DEPOSITION METHOD | TOKYO ELECTRON LTD (JP) | 2017-09-20 | — | — | EP | claimed |
| US-9677178-B2 | Alkoxyaminosilane compounds and applications thereof | VERSUM MATERIALS US, LLC (US) | 2017-06-13 | — | — | US | claimed |
| US-20050161060-A1 | Cleaning CVD chambers following deposition of porogen-containing materials | AIR PRODUCTS AND CHEMICALS, INC. | 2005-07-28 | — | — | US | claimed |
| US-6846515-B2 | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2005-01-25 | — | — | US | claimed |
| US-20040197474-A1 | Method for enhancing deposition rate of chemical vapor deposition films | VERSUM MATERIALS US, LLC | 2004-10-07 | — | — | US | claimed |
| EP-1464726-A2 | CVD method for forming a porous low dielectric constant SiOCH film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-10-06 | — | — | EP | claimed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | claimed |
| US-20030198742-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-10-23 | — | — | US | claimed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | claimed |
| US-6583048-B2 | Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. | AIR PRODUCTS AND CHEMICALS, INC. | 2003-06-24 | — | — | US | claimed |
| US-20020142579-A1 | ORGANOSILICON PRECURSORS FOR INTERLAYER DIELECTRIC FILMS WITH LOW DIELECTRIC CONSTANTS | VERSUM MATERIALS US, LLC | 2002-10-03 | — | — | US | claimed |
| EP-1225194-A2 | Method of forming a dielectric interlayer film with organosilicon precursors | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2002-07-24 | — | — | EP | claimed |