SCHEMBL47483

SCHEMBL47483

CC1C2CC(CCCO)C(C2)C1C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13319485 0.94
SCHEMBL47527 0.88
SCHEMBL13992882 0.82
SCHEMBL24772279 0.79
SCHEMBL13714724 0.79 GBA1 (0.30)
SCHEMBL47544 0.79 GBA1 (0.30)
SCHEMBL47477 0.76
SCHEMBL21944674 0.74 TSHR (0.32)
SCHEMBL13609005 0.73 ALOX5 (0.36)
SCHEMBL17123459 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8859187-B2 Method of forming resist pattern and negative resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-10-14 US disclosed
US-8771921-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-08 US disclosed
US-8735052-B2 Surface modifying material, method of forming resist pattern, and method of forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-27 US disclosed
US-8541157-B2 Resist composition, method of forming resist pattern, compound and acid generator including the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-24 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8404426-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-26 US disclosed
US-8354218-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-15 US disclosed
US-8263322-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-09-11 US disclosed
US-8247161-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8236483-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-07 US disclosed
US-20100150506-A1 POLYMER OPTICAL WAVEGUIDE FORMING MATERIAL, POLYMER OPTICAL WAVEGUIDE AND MANUFACTURING METHOD OF POLYMER OPTICAL WAVEGUIDE NEC CORPORATION (JP) 2010-06-17 US disclosed
US-20100143844-A1 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100062379-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed
US-20100035192-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-11 US disclosed
US-20100035178-A1 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. 2010-02-11 US disclosed
US-20090274976-A1 Negative resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-11-05 US disclosed
US-7598017-B2 Negative resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-10-06 US disclosed
US-20090191478-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD (JP) 2009-07-30 US disclosed
US-20090111054-A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-30 US disclosed