⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL47483 | 0.88 | — | — | |
| SCHEMBL13319485 | 0.86 | — | — | |
| SCHEMBL47544 | 0.82 | GBA1 (0.30) | — | |
| SCHEMBL13714724 | 0.82 | GBA1 (0.30) | — | |
| SCHEMBL47572 | 0.81 | TSHR (0.34) | — | |
| SCHEMBL24772279 | 0.79 | — | — | |
| SCHEMBL13609005 | 0.76 | ALOX5 (0.36) | — | |
| SCHEMBL24772282 | 0.76 | — | — | |
| SCHEMBL17123459 | 0.75 | — | — | |
| SCHEMBL12230474 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20170102618-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2017-04-13 | — | — | US | disclosed |
| US-20160349620-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9482958-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150293454-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| US-9097973-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2015-08-04 | — | — | US | disclosed |
| US-8999621-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8871642-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2014-10-28 | — | — | US | disclosed |
| US-8859187-B2 | Method of forming resist pattern and negative resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| US-20100081088-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-20100062379-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100035192-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-11 | — | — | US | disclosed |
| US-20100035178-A1 | Negative resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2010-02-11 | — | — | US | disclosed |
| US-20090274976-A1 | Negative resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-7598017-B2 | Negative resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-06 | — | — | US | disclosed |
| US-20090191478-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD (JP) | 2009-07-30 | — | — | US | disclosed |
| US-20090111054-A1 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090087799-A1 | ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-7416833-B2 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-26 | — | — | US | disclosed |