SCHEMBL47499

SCHEMBL47499

CCC(C)(C)C(=O)OC1CCOC1=O

nearest known ligand 0.48

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.48
KDM4E B2RXH2 2/20 0.48
HPGD P15428 2/20 0.48
HSD17B10 Q99714 1/20 0.48
POLB P06746 2/20 0.45
MAPK1 P28482 5/20 0.44
CYP1A2 P05177 1/20 0.44
CYP2C9 P11712 1/20 0.44
CYP2C19 P33261 1/20 0.44
FKBP1A P62942 2/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
GAA P10253 1/20 0.42
TSHR P16473 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13779623 0.92 ALDH1A1 (0.45) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL111836 0.91 FKBP1A (0.48) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL47465 0.90 KDM4E (0.43) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL18286526 0.90 FKBP1A (0.50) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL13713321 0.88 ALDH1A1 (0.44) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL13154098 0.88 KDM4E (0.44) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL12603696 0.88 ALDH1A1 (0.46) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL19558309 0.88 ALDH1A1 (0.45) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL12973914 0.88 KDM4E (0.48) ALDH1A1KDM4EHPGDHSD17B10POLB
SCHEMBL14750834 0.87 ALDH1A1 (0.43) ALDH1A1KDM4EHPGDHSD17B10POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2621 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240241440-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240219831-A1 PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-04 US disclosed
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20240219834-A1 METHOD FOR FORMING A RESIST PATTERN NISSAN CHEMICAL CORPORATION (JP) 2024-07-04 US disclosed
US-20240219834-A1 METHOD FOR FORMING A RESIST PATTERN NISSAN CHEMICAL CORPORATION (JP) 2024-07-04 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070031755-A1 Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film TOKO OHKA KOGYO CO., LTD. (JP) 2007-02-08 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed