SCHEMBL47562

SCHEMBL47562

CCC(C)(C)C(=O)OCCC(=O)OC1CCOC1=O

nearest known ligand 0.46

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.44
ALDH1A1 P00352 2/20 0.44
HPGD P15428 1/20 0.44
HSD17B10 Q99714 1/20 0.44
MAPK1 P28482 4/20 0.43
CYP1A2 P05177 1/20 0.43
CYP2C9 P11712 1/20 0.43
CYP2C19 P33261 1/20 0.43
TSHR P16473 2/20 0.39
POLB P06746 1/20 0.38
FKBP1A P62942 2/20 0.38
SMN1; SMN2 Q16637 2/20 0.38
GAA P10253 1/20 0.36
NTSR1 P30989 1/20 0.36
ATM Q13315 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13779612 0.93 KDM4E (0.42) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779628 0.92 KDM4E (0.41) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779626 0.91 KDM4E (0.41) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779624 0.91 KDM4E (0.41) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL47503 0.87 KDM4E (0.45) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779627 0.85 KDM4E (0.44) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL47499 0.84 ALDH1A1 (0.48) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL17589064 0.83 MAPK1 (0.45) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779638 0.83 KDM4E (0.41) KDM4EALDH1A1HPGDHSD17B10MAPK1
SCHEMBL13779623 0.82 ALDH1A1 (0.45) KDM4EALDH1A1HPGDHSD17B10MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 179 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 US disclosed
US-9977328-B2 Chemically amplified positive-type photosensitive resin composition for thick film TOKYO OHKA KOGYO CO., LTD. (JP) 2018-05-22 US disclosed
US-20170315444-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2017-11-02 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9494866-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20110039207-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-17 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed
US-20100028803-A1 SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-02-04 US disclosed
US-20100028803-A1 SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-02-04 US disclosed
US-20090325103-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2009-12-31 US disclosed
US-20090325103-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2009-12-31 US disclosed
US-7556908-B2 Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-07 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed