SCHEMBL479251

SCHEMBL479251

CO[Si](C)(C)[Si](C)(C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL996457 0.80
SCHEMBL1271765 0.77
Ethane SCHEMBL28197216 0.77
SCHEMBL247770 0.77
SCHEMBL645481 0.77
SCHEMBL3408625 0.75
SCHEMBL28161849 0.74
SCHEMBL17973726 0.74
SCHEMBL17831223 0.71
SCHEMBL28152 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 320 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9216952-B2 Process for preparing antiviral compound ABBVIE INC. (US) 2015-12-22 US claimed
EP-2411372-B1 PROCESS FOR PREPARING AN ANTIVIRAL COMPOUND ABBVIE BAHAMAS LTD (BS) 2014-07-23 EP claimed
EP-2411372-A1 PROCESS FOR PREPARING ANTIVIRAL COMPOUND Abbott Laboratories (US) 2012-02-01 EP claimed
US-20110237793-A1 PROCESS FOR PREPARING ANTIVIRAL COMPOUND ABBOTT LABORATORIES (US) 2011-09-29 US claimed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US claimed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US claimed
WO-2010111348-A1 PROCESS FOR PREPARING ANTIVIRAL COMPOUND ABBOTT LABORATORIES (US) 2010-09-30 WO claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
EP-1225194-B1 Method of forming a dielectric interlayer film with organosilicon precursors AIR PROD & CHEM (US) 2008-10-01 EP claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed
US-6583048-B2 Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. AIR PRODUCTS AND CHEMICALS, INC. 2003-06-24 US claimed
US-20020142579-A1 ORGANOSILICON PRECURSORS FOR INTERLAYER DIELECTRIC FILMS WITH LOW DIELECTRIC CONSTANTS VERSUM MATERIALS US, LLC 2002-10-03 US claimed
EP-1225194-A2 Method of forming a dielectric interlayer film with organosilicon precursors AIR PRODUCTS AND CHEMICALS, INC. (US) 2002-07-24 EP claimed
US-12575404-B2 Semiconductor device with protection layer and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2026-03-10 US disclosed
US-20260040912-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
US-20260040913-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
EP-0378430-A1 Novel organosilicon compound and process for producing organosilicon compound DIRECTOR-GENERAL OF THE AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 1990-07-18 EP disclosed
US-4889904-A HEATING MIXTURE OF ALKOXY-FUNCTIONAL DISILANE AND EITHER ALKOXY-FUNCTIONAL SILANE WITH UNSATURATED SUBSTITUENT OR UNSATURATED HYDROCARBON DOW CORNING CORPORATION (US) 1989-12-26 US disclosed
EP-0292260-A2 Process for producing 1,3-bis(dicarboxyphenyl)-disiloxane derivative or dianhydride thereof Hitachi Chemical Co., Ltd. (JP) 1988-11-23 EP disclosed
US-4730055-A Method for silylating aromatic imides and silylimides made therefrom GENERAL ELECTRIC COMPANY (US) 1988-03-08 US disclosed