Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL479594

N.N.N.N.[AlH3].[Ti].[Ti].[Ti]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 326 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117960979-A Mould structure for prolonging service life of mould core 联钢精密科技(中国)有限公司 2024-05-03 CN claimed
US-11942514-B2 Semiconductor device NANYA TECHNOLOGY CORPORATION (TW) 2024-03-26 US claimed
US-11765882-B2 Method for fabricating semiconductor device NANYA TECHNOLOGY CORPORATION (TW) 2023-09-19 US claimed
US-20230253210-A1 SEMICONDUCTOR DEVICE WITH PROTECTION LAYER NANYA TECHNOLOGY CORPORATION (TW) 2023-08-10 US claimed
US-20230253209-A1 SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2023-08-10 US claimed
US-20220059542-A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2022-02-24 US claimed
US-11158795-B2 Resistive switching memory with replacement metal electrode INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2021-10-26 US claimed
US-20210175236-A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2021-06-10 US claimed
US-20200263620-A1 RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-08-20 US claimed
US-10727407-B2 Resistive switching memory with replacement metal electrode INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-07-28 US claimed
US-20090236583-A1 Method of fabricating a phase change memory and phase change memory MARLIN SEMICONDUCTOR LIMITED (IE) 2009-09-24 US claimed
US-7592657-B2 Semiconductor device and method of manufacturing the same FUJITSU MICROELECTRONICS LIMITED (JP) 2009-09-22 US claimed
US-7550392-B2 Semiconductor device and method of manufacturing the same FUJITSU MICROELECTRONICS LIMITED (JP) 2009-06-23 US claimed
CN-101429641-A Chromium nitride, titanium nitride aluminum hard multi-layer nano-film coating CHENGDU MINJIE MFG ENGINEERING (CN) 2009-05-13 CN claimed
US-20080001254-A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2008-01-03 US claimed
CN-101068039-A Structure and method for bistable resistance random access memory MACRONIX INT CO LTD (CN) 2007-11-07 CN claimed
US-20060281316-A1 Semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2006-12-14 US claimed
US-5981416-A SINTERING A POWDER CONTAINING TITANIUM ALUMINUM NITRIDE; USED AS CUTTING TOOL FOR HIGH SPEED CUTTING SPHEROIDAL GRAPHITE CAST IRON NATIONAL INDUSTRIAL RESEARCH INSTITUTE OF NAGOYA (JP) 1999-11-09 US claimed
US-5943600-A Treatment of a titanium nitride layer to improve resistance to elevated temperatures APPLIED MATERIALS, INC. (US) 1999-08-24 US claimed
EP-0732731-A2 Treatment of a titanium nitride layer to improve resistance to elevated temperatures APPLIED MATERIALS, INC. (US) 1996-09-18 EP claimed