Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL712965

N.N.N.N.[AlH3].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5666007-A Interconnect structures for integrated circuits NATIONAL SEMICONDUCTOR CORPORATION (US) 1997-09-09 US claimed
CN-118284167-A Display substrate and electronic device 京东方科技集团股份有限公司 2024-07-02 CN disclosed
US-20240179950-A1 DISPLAY SUBSTRATE AND ELECTRONIC APPARATUS YUNNAN INVENSIGHT OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2024-05-30 US disclosed
US-20240179951-A1 DISPLAY SUBSTRATE AND ELECTRONIC APPARATUS YUNNAN INVENSIGHT OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2024-05-30 US disclosed
CN-118019391-A Display substrate and electronic device 京东方科技集团股份有限公司 2024-05-10 CN disclosed
US-11980069-B2 Display and display device BOE TECHNOLOGY GROUP CO., LTD. (CN) 2024-05-07 US disclosed
US-11963406-B2 Display and display device BOE TECHNOLOGY GROUP CO., LTD. (CN) 2024-04-16 US disclosed
EP-4280843-A1 DISPLAY SUBSTRATE AND ELECTRONIC DEVICE BOE Technology Group Co., Ltd. (CN) 2023-11-22 EP disclosed
EP-4280255-A1 DISPLAY SUBSTRATE AND ELECTRONIC APPARATUS BOE Technology Group Co., Ltd. (CN) 2023-11-22 EP disclosed
CN-112703615-B Display substrate and manufacturing method thereof 京东方科技集团股份有限公司 2023-04-25 CN disclosed
CN-101740612-A Contact structure for semiconductor device having trench shield electrode and method SEMICONDUCTOR ELEMENT INDUSTRY 2010-06-16 CN disclosed
CN-101740623-A Semiconductor device having trench shield electrode structure SEMICONDUCTOR ELEMENT INDUSTRY 2010-06-16 CN disclosed
CN-101740622-A Trench shielding structure for semiconductor device and method SEMICONDUCTOR ELEMENT INDUSTRY 2010-06-16 CN disclosed
CN-101740546-A Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same SHANGHAI HUAHONG NEC ELECT CO 2010-06-16 CN disclosed
US-6413871-B2 Nitrogen treatment of polished halogen-doped silicon glass APPLIED MATERIALS, INC. 2002-07-02 US disclosed
US-20010033900-A1 NITROGEN TREATMENT OF POLISHED HALOGEN-DOPED SILICON GLASS APPLIED MATERIALS, INC. 2001-10-25 US disclosed
US-5783490-A Photolithography alignment mark and manufacturing method VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) 1998-07-21 US disclosed
US-5559055-A DECREASING CAPACITANCE BY REPLACING THE INTERLAYER SILICON DIOXIDE WITH AIR ADVANCED MICRO DEVICES, INC. (US) 1996-09-24 US disclosed
US-5504043-A SILICIDING, NITRIDING TITANIUM ON SILICON SUBSTRATE IN VACCUM APPLIED MATERIALS, INC. (US) 1996-04-02 US disclosed
US-5378660-A Barrier layers and aluminum contacts APPLIED MATERIALS, INC. (US) 1995-01-03 US disclosed