SCHEMBL4802279

SCHEMBL4802279

CC(=O)OC([SiH3])(CCC1CCC2OC2C1)OC(C)=O

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
PTGS1 P23219 1/20 0.31
PTGS2 P35354 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1665119 0.80 PTGS1 (0.34) PTGS1PTGS2
SCHEMBL1664609 0.78 PTGS1 (0.30) PTGS1PTGS2
SCHEMBL4809345 0.78 NAAA (0.31)
SCHEMBL21816857 0.76
SCHEMBL4808454 0.76
SCHEMBL6419937 0.75 GAA (0.30) PTGS1PTGS2
SCHEMBL4808992 0.74 PTGS1 (0.31) PTGS1PTGS2
SCHEMBL5822786 0.73 PTGS1 (0.33) PTGS1PTGS2
SCHEMBL17530118 0.72 PTGS1 (0.31) PTGS1PTGS2
SCHEMBL4807213 0.72 PTGS1 (0.33) PTGS1PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023171514-A1 LAMINATE AND PACKAGING MATERIAL DIC株式会社 2023-09-14 WO disclosed
WO-2022264906-A1 PRIMER COMPOSITION FOR INORGANIC OXIDE VAPOR DEPOSITION, CURED PRODUCT AND MULTILAYER BODY DIC株式会社 2022-12-22 WO disclosed
EP-3213915-B1 LAMINATE DAINIPPON INK & CHEMICALS (JP) 2019-08-14 EP disclosed
US-20170253965-A1 LAMINATE DIC CORPORATION (JP) 2017-09-07 US disclosed
EP-3213915-A1 LAMINATE DIC Corporation (JP) 2017-09-06 EP disclosed
US-20140061970-A1 NANOIMPRINT CURABLE COMPOSITION, NANOIMPRINT-LITHOGRAPHIC MOLDED PRODUCT, AND METHOD FOR FORMING PATTERN DIC CORPORATION (JP) 2014-03-06 US disclosed
US-7435668-B2 Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions SONY CORPORATION (JP) 2008-10-14 US disclosed
US-7335539-B2 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2008-02-26 US disclosed
US-20070298550-A1 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2007-12-27 US disclosed
US-7273774-B2 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2007-09-25 US disclosed
US-20060079033-A1 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2006-04-13 US disclosed
US-20050181566-A1 Method for doping impurities, methods for producing semiconductor device and applied electronic apparatus SONY CORPORATION (JP) 2005-08-18 US disclosed