Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.33 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.33 |
| ▸ | PRMT5 | O14744 | 1/20 | 0.32 |
| ▸ | WDR77 | Q9BQA1 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.32 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.32 |
| ▸ | ABHD6 | Q9BV23 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15025360 | 0.86 | USP2 (0.35) | USP2TSHRALDH1A1SLC6A3PRMT5 | |
| SCHEMBL15025103 | 0.84 | USP2 (0.36) | USP2TSHRALDH1A1SLC6A3PRMT5 | |
| SCHEMBL15025396 | 0.83 | USP2 (0.31) | USP2TSHRALDH1A1SLC6A3 | |
| SCHEMBL4810424 | 0.80 | KDM4E (0.37) | ALDH1A1KDM4ESMN1; SMN2EPHX2ABHD6 | |
| SCHEMBL15024852 | 0.80 | USP2 (0.31) | USP2TSHR | |
| SCHEMBL4807229 | 0.79 | USP2 (0.56) | USP2TSHRALDH1A1KDM4ESMN1; SMN2 | |
| SCHEMBL13985573 | 0.77 | USP2 (0.55) | USP2TSHRALDH1A1KDM4ESMN1; SMN2 | |
| SCHEMBL30426109 | 0.76 | — | — | |
| SCHEMBL30429963 | 0.76 | — | — | |
| SCHEMBL30426127 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2602660-B1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHINETSU CHEMICAL CO (JP) | 2019-03-20 | — | — | EP | disclosed |
| US-9158191-B2 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-13 | — | — | US | disclosed |
| US-20130149493-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-13 | — | — | US | disclosed |
| EP-2602660-A1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-06-12 | — | — | EP | disclosed |
| US-7468236-B2 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-23 | — | — | US | disclosed |
| US-20070087287-A1 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-04-19 | — | — | US | disclosed |