Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | USP2 | O75604 | 2/20 | 0.56 |
| ▸ | ATM | Q13315 | 1/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | PKM | P14618 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13985573 | 0.98 | USP2 (0.55) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL13985580 | 0.89 | USP2 (0.51) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL13985574 | 0.89 | USP2 (0.55) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL17165980 | 0.88 | USP2 (0.53) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL15025112 | 0.81 | USP2 (0.49) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL13980438 | 0.79 | USP2 (0.55) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL15025355 | 0.79 | USP2 (0.50) | USP2ATMKDM4EL3MBTL1SMN1; SMN2 | |
| SCHEMBL13985575 | 0.79 | ALDH1A1 (0.45) | USP2ATMKDM4ESMN1; SMN2HSD17B10 | |
| SCHEMBL4806264 | 0.79 | USP2 (0.36) | USP2KDM4ESMN1; SMN2TSHRALDH1A1 | |
| SCHEMBL13985576 | 0.78 | ALDH1A1 (0.44) | USP2ATMKDM4ESMN1; SMN2HSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2602660-B1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHINETSU CHEMICAL CO (JP) | 2019-03-20 | — | — | EP | disclosed |
| US-9158191-B2 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-13 | — | — | US | disclosed |
| US-9158191-B2 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-13 | — | — | US | disclosed |
| US-20130149493-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-13 | — | — | US | disclosed |
| US-20130149493-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-13 | — | — | US | disclosed |
| EP-2602660-A1 | Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-06-12 | — | — | EP | disclosed |
| US-7468236-B2 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-23 | — | — | US | disclosed |
| US-7468236-B2 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-23 | — | — | US | disclosed |
| US-20070087287-A1 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-04-19 | — | — | US | disclosed |
| US-20070087287-A1 | Amine compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-04-19 | — | — | US | disclosed |