SCHEMBL4808035

SCHEMBL4808035

CCCCC(CC)C[Si](OCCC)(OCCC)OCCC

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 5/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
ALDH1A1 P00352 5/20 0.43
TDP1 Q9NUW8 3/20 0.43
TSHR P16473 3/20 0.42
ATM Q13315 1/20 0.37
CA2 P00918 3/20 0.36
MMP9 P14780 1/20 0.33
MMP8 P22894 1/20 0.33
MMP14 P50281 1/20 0.33
RECQL P46063 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
ADORA3 P0DMS8 1/20 0.31
CHRM1 P11229 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4808361 0.92 CYP3A4 (0.44) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL4811497 0.90 CYP3A4 (0.43) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL906667 0.86 CYP3A4 (0.46) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL20658101 0.85
SCHEMBL9861240 0.82 CYP3A4 (0.49) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL29276972 0.79 CYP3A4 (0.41) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL393854 0.79 CYP3A4 (0.47) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL10636470 0.76 ALDH1A1 (0.52) CYP3A4L3MBTL1ALDH1A1TDP1TSHR
SCHEMBL9859626 0.76 MMP13 (0.30)
SCHEMBL3700261 0.73 ALDH1A1 (0.45) CYP3A4L3MBTL1ALDH1A1TDP1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100381526-C Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHINETSU CHEMICAL CO (JP) 2008-04-16 CN disclosed
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
CN-1542071-A Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-11-03 CN disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed