SCHEMBL4809359

SCHEMBL4809359

O=[Si]([O-])Oc1ccccc1.[Rb+]

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 4/20 0.39
CA2 P00918 4/20 0.39
CA9 Q16790 4/20 0.39
LTA4H P09960 1/20 0.39
TSHR P16473 1/20 0.39
SOS1 Q07889 1/20 0.39
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
CA4 P22748 3/20 0.36
LMNA P02545 3/20 0.35
HTT P42858 2/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
CA5A P35218 3/20 0.35
CA5B Q9Y2D0 3/20 0.35
CA12 O43570 2/20 0.35
CA7 P43166 2/20 0.35
SRC P12931 1/20 0.34
KMT2A Q03164 1/20 0.34
KCNA3 P22001 1/20 0.33
ALOX15 P16050 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Potassium Ion SCHEMBL4807478 0.95 CA1 (0.39) CA1CA2CA9LTA4HTSHR
SCHEMBL4809211 0.95 CA1 (0.39) CA1CA2CA9LTA4HTSHR
SCHEMBL4813680 0.95 CA1 (0.39) CA1CA2CA9LTA4HTSHR
Lithium Ion SCHEMBL4809939 0.95 CA1 (0.39) CA1CA2CA9LTA4HTSHR
Catechol SCHEMBL10816051 0.87 CA1 (0.34) CA1CA2CA9LTA4HTSHR
SCHEMBL896124 0.76 LTA4H (0.45) CA1CA2CA9LTA4HTSHR
SCHEMBL230788 0.72 LTA4H (0.41) CA1CA2CA9LTA4HTSHR
SCHEMBL275158 0.69 LTA4H (0.50) CA1CA2CA9LTA4HTSHR
Formaldehyde SCHEMBL1662313 0.68 CA1 (0.38) CA1CA2CA9LTA4HTSHR
SCHEMBL18783116 0.68 CA4 (0.46) CA1CA2CA9LTA4HTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed