Cetrimonium

Cetrimonium

SCHEMBL4813822

CCCCCCCCCCCCCCCC[N+](C)(C)C.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.58

Full drug profile on Sugi Atlas →

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 6/20 0.58
APAF1 O14727 1/20 0.54
HSP90AA1 P07900 1/20 0.54
RAD52 P43351 1/20 0.54
KCNH2 Q12809 6/20 0.46
BBOX1 O75936 1/20 0.45
ENPP2 Q13822 3/20 0.44
LSS P48449 1/20 0.43
EPHX1 P07099 1/20 0.43
KDM4E B2RXH2 1/20 0.42
MEN1 O00255 1/20 0.42
LMNA P02545 1/20 0.42
NFKB1 P19838 1/20 0.42
ACHE P22303 1/20 0.42
APEX1 P27695 1/20 0.42
KMT2A Q03164 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
HSD17B10 Q99714 1/20 0.42
HRH3 Q9Y5N1 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL14990762 1.00 DNM1 (0.58) DNM1APAF1HSP90AA1RAD52KCNH2
Trifluoromethanesulfonic Acid SCHEMBL5493268 1.00 DNM1 (0.58) DNM1APAF1HSP90AA1RAD52KCNH2
Trifluoromethanesulfonic Acid SCHEMBL28570511 0.98 DNM1 (0.54) DNM1APAF1HSP90AA1RAD52KCNH2
Trifluoromethanesulfonic Acid SCHEMBL10660719 0.92 BBOX1 (0.48) DNM1APAF1HSP90AA1RAD52KCNH2
Trifluoromethanesulfonic Acid SCHEMBL8770118 0.89 HTT (0.58) DNM1HSP90AA1RAD52KCNH2KMT2A
Trifluoromethanesulfonic Acid SCHEMBL17180014 0.89 HTT (0.58) DNM1HSP90AA1RAD52KCNH2KMT2A
Trifluoromethanesulfonic Acid SCHEMBL8769534 0.89 HTT (0.58) DNM1HSP90AA1RAD52KCNH2KMT2A
Trifluoromethanesulfonic Acid SCHEMBL8769828 0.89 HTT (0.58) DNM1HSP90AA1RAD52KCNH2KMT2A
Trifluoromethanesulfonic Acid SCHEMBL5175694 0.89 KCNH2 (0.46) DNM1KCNH2LSSEPHX1
Trifluoromethanesulfonic Acid SCHEMBL597290 0.89 KCNH2 (0.46) DNM1KCNH2LSSEPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4689251-A2 DOPE ADDITIVE AND FIBER Toray Opelontex Co., Ltd (JP) 2026-02-11 EP disclosed
CN-119053420-A Polyurethane elastic fiber and method for producing same 东丽奥培隆特士有限公司 2024-11-29 CN disclosed
CN-119053419-A Polyurethane elastic fiber and method for producing same 东丽奥培隆特士有限公司 2024-11-29 CN disclosed
CN-118974333-A Polyurethane elastic fiber 东丽奥培隆特士有限公司 2024-11-15 CN disclosed
WO-2024201418-A2 DOPE ADDITIVE AND FIBER TORAY-OPELONTEX CO., LTD. (JP) 2024-10-03 WO disclosed
US-20140148537-A1 ELASTIC POLYURETHANE THREAD AND MANUFACTURING METHOD THEREOF TORAY OPELONTEX CO., LTD. (JP) 2014-05-29 US disclosed
EP-2631338-A1 ELASTIC POLYURETHANE THREAD AND MANUFACTURING METHOD THEREOF Toray Opelontex Co., Ltd (JP) 2013-08-28 EP disclosed
US-7341775-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) 2008-03-11 US disclosed
US-20060289849-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2006-12-28 US disclosed
US-7119354-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-10 US disclosed
EP-1580804-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-28 EP disclosed
US-20040235971-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-25 US disclosed
US-20040201007-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-10-14 US disclosed