Benzil

Benzil

SCHEMBL4814635

CC(=O)O.O=C(C(=O)c1ccccc1)c1ccccc1

nearest known ligand 0.82

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of Benzil. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CES2 O00748 14/20 0.82
CES1 P23141 13/20 0.82
RAB9A P51151 1/20 0.60
TSHR P16473 2/20 0.55
DAO P14920 1/20 0.55
NAPRT Q6XQN6 1/20 0.55
ALDH1A1 P00352 1/20 0.55
LMNA P02545 1/20 0.54
MAPT P10636 1/20 0.54
XBP1 P17861 1/20 0.54
ATM Q13315 1/20 0.54
SMN1; SMN2 Q16637 1/20 0.54
NPSR1 Q6W5P4 1/20 0.54

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Benzil SCHEMBL2252919 0.94 CES2 (0.82) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL1481339 0.92 CES2 (0.80) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL4832229 0.91 CES2 (0.88) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL27655380 0.91 CES2 (0.88) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL66 0.91 CES2 (1.00) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL2156589 0.91 CES2 (1.00) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL9517636 0.91 CES2 (1.00) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL28475956 0.91 CES2 (1.00) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL7142843 0.91 CES2 (1.00) CES2CES1RAB9ATSHRDAO
Benzil SCHEMBL6753094 0.89 CES2 (0.74) CES2CES1RAB9ATSHRDAO

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250109249-A1 Polyimide Resin, Resin Composition Containing Said Polyimide Resin, and Cured Product Thereof NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2025-04-03 US disclosed
US-12247104-B2 Polyamic acid resin, polyimide resin, and resin composition including these NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2025-03-11 US disclosed
US-20240343865-A1 Polyimide Resin, Resin Composition Comprising Polyimide Resin and Cured Product Thereof NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2024-10-17 US disclosed
CN-117924626-A Block copolymer composition and method for producing the same 科腾聚合物荷兰有限责任公司 2024-04-26 CN disclosed
CN-117015586-A Aerosol raw material composition, aerosol composition and aerosol product AGC株式会社 2023-11-07 CN disclosed
US-20220169791-A1 Polyamic Acid Resin, Polyimide Resin, and Resin Composition Including These NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2022-06-02 US disclosed
US-7405459-B2 Semiconductor device comprising porous film SHIN-ETSU CHEMICAL CO. LTD. (JP) 2008-07-29 US disclosed
US-20080118737-A1 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide SHIN-ETSU CHEMICAL CO. LTD. 2008-05-22 US disclosed
US-7309722-B2 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide SHIN-ETSU CHEMICAL CO. LTD. (JP) 2007-12-18 US disclosed
US-7244657-B2 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO. LTD. (JP) 2007-07-17 US disclosed
US-20070108593-A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device OGIHARA TSUTOMU 2007-05-17 US disclosed
US-20040105986-A1 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide PANASONIC CORPORATION (JP) 2004-06-03 US disclosed
US-20040091419-A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-13 US disclosed
EP-0051320-B1 RADIATION-SENSITIVE NEGATIVE RESIST NEC CORPORATION (JP) 1986-06-04 EP disclosed
US-4592993-A Selectively exposure radiation sensitive polymer to radiation; developing; dry etching NIPPON ELECTRIC CO., LTD. (JP) 1986-06-03 US disclosed
EP-0051320-A2 Radiation-sensitive negative resist NEC CORPORATION (JP) 1982-05-12 EP disclosed