Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 10/20 | 0.53 |
| ▸ | TSHR | P16473 | 2/20 | 0.48 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.44 |
| ▸ | THRB | P10828 | 1/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.40 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.40 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10550382 | 0.98 | ALDH1A1 (0.51) | ALDH1A1TSHRMEN1KMT2ATHRB | |
| SCHEMBL844829 | 0.94 | ALDH1A1 (0.50) | ALDH1A1TSHRMEN1KMT2ATHRB | |
| SCHEMBL4206502 | 0.93 | ALDH1A1 (0.48) | ALDH1A1TSHRMEN1KMT2ATHRB | |
| SCHEMBL844467 | 0.90 | ALDH1A1 (0.54) | ALDH1A1TSHRTHRBSMN1; SMN2MAPT | |
| SCHEMBL19474878 | 0.89 | ALDH1A1 (0.52) | ALDH1A1TSHRTHRBSMN1; SMN2MAPT | |
| SCHEMBL5656419 | 0.89 | ALDH1A1 (0.52) | ALDH1A1TSHRTHRBSMN1; SMN2MAPT | |
| SCHEMBL11848105 | 0.89 | ALDH1A1 (0.52) | ALDH1A1TSHRTHRBSMN1; SMN2MAPT | |
| SCHEMBL28810775 | 0.89 | ALDH1A1 (0.52) | ALDH1A1TSHRTHRBSMN1; SMN2MAPT | |
| Ether SCHEMBL10550379 | 0.89 | ALDH1A1 (0.47) | ALDH1A1TSHRMEN1KMT2ATHRB | |
| SCHEMBL812745 | 0.88 | ALDH1A1 (0.46) | ALDH1A1MEN1KMT2ASMN1; SMN2MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 111 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| CN-111349185-B | Solid catalyst for propylene polymerization and method for producing block copolymer using the same | 韩华道达尔能源有限公司 | 2023-02-03 | — | — | CN | disclosed |
| US-11427657-B2 | Solid catalyst for propylene polymerization and method of producing block copolymer using the same | HANWHA TOTAL PETROCHEMICAL CO., LTD. (KR) | 2022-08-30 | — | — | US | disclosed |
| EP-3279727-B1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-06-09 | — | — | EP | disclosed |
| WO-2021049472-A1 | COMPOUND, RESIN, COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, UNDERLAYER FILM, AND OPTICAL ARTICLE | 学校法人 関西大学 | 2021-03-18 | — | — | WO | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| EP-3744710-A1 | COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-02 | — | — | EP | disclosed |
| WO-2020158931-A1 | COMPOUND, RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN AND METHOD FOR PURIFYING RESIN | 三菱瓦斯化学株式会社 | 2020-08-06 | — | — | WO | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| CN-111349185-A | Solid catalyst for propylene polymerization and method for producing block copolymer using the same | 韩华道达尔有限公司 | 2020-06-30 | — | — | CN | disclosed |
| US-7141351-B2 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-11-28 | — | — | US | disclosed |
| US-7141352-B2 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-11-28 | — | — | US | disclosed |
| US-20060228648-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-10-12 | — | — | US | disclosed |
| EP-1710230-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-10-11 | — | — | EP | disclosed |
| US-20050238993-A1 | Nitrogen-containing organic compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-27 | — | — | US | disclosed |
| US-20050106500-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-19 | — | — | US | disclosed |
| US-20050095533-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-05 | — | — | US | disclosed |
| US-20050008968-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-13 | — | — | US | disclosed |
| US-20040234884-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |
| US-20040234885-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ALDH1A1 1553/4885TSHR 1302/4885MEN1 1579/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ALDH1A1 1540/4885TSHR 1292/4885MEN1 1512/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.