⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1130260 | 0.67 | — | — | |
| SCHEMBL3320271 | 0.67 | — | — | |
| SCHEMBL18694999 | 0.67 | — | — | |
| SCHEMBL24425413 | 0.67 | — | — | |
| SCHEMBL858269 | 0.67 | — | — | |
| SCHEMBL24425415 | 0.67 | — | — | |
| SCHEMBL166509 | 0.50 | — | — | |
| SCHEMBL8023481 | 0.50 | — | — | |
| SCHEMBL1538568 | 0.50 | — | — | |
| SCHEMBL175898 | 0.35 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112239860-B | Method for forming transition metal dichalcogenide film on substrate | 三星电子株式会社 | 2025-01-10 | — | — | CN | claimed |
| WO-2024253160-A1 | TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY | JSR株式会社 | 2024-12-12 | — | — | WO | claimed |
| US-11881399-B2 | Method of forming transition metal dichalcogenide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-01-23 | — | — | US | claimed |
| US-20230024913-A1 | METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| CN-115427449-A | anti-Gal 3 antibodies and methods of use | 真和制药有限公司 | 2022-12-02 | — | — | CN | claimed |
| US-11476117-B2 | Method of forming transition metal dichalcogenide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-10-18 | — | — | US | claimed |
| EP-4732308-A2 | FISSION PRODUCT EXTRACTION SYSTEM AND METHODS OF USE THEREOF | Abilene Christian University (US) | 2026-04-29 | — | — | EP | disclosed |
| WO-2025245154-A1 | METALLIZATION PRECURSORS AND ONBOARD COMBINATORIAL CHEMICAL SYNTHESIS | LAM RESEARCH CORPORATION (US) | 2025-11-27 | — | — | WO | disclosed |
| US-20250336554-A1 | FISSION PRODUCT EXTRACTION SYSTEM AND METHODS OF USE THEREOF | ABILENE CHRISTIAN UNIV (US) | 2025-10-30 | — | — | US | disclosed |
| US-12441626-B2 | Methods for the purification of molybdenum-99 with phase transfer agents | ABILENE CHRISTIAN UNIVERSITY (US) | 2025-10-14 | — | — | US | disclosed |
| US-12431253-B2 | Fission product extraction system and methods of use thereof | ABILENE CHRISTIAN UNIVERSITY (US) | 2025-09-30 | — | — | US | disclosed |
| US-12297532-B2 | Metal chalcogenide film and method and device for manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-13 | — | — | US | disclosed |
| US-20250109035-A1 | Methods for the Purification of Molybdenum-99 with Phase Transfer Agents | ABILENE CHRISTIAN UNIVERSITY | 2025-04-03 | — | — | US | disclosed |
| US-20120156115-A1 | Systems and Methods for Treating Material | BATTELLE MEMORIAL INSTITUTE | 2012-06-21 | — | — | US | disclosed |
| EP-0984903-B1 | REMOVAL OF TECHNETIUM IMPURITIES FROM URANIUM HEXAFLUORIDE | US ENRICHMENT CORP (US) | 2012-02-01 | — | — | EP | disclosed |
| WO-2010014745-A2 | SYSTEMS AND METHODS FOR TREATING MATERIAL | BATTELLE MEMORIAL INSTITUTE (US) | 2010-02-04 | — | — | WO | disclosed |
| EP-0984903-A4 | REMOVAL OF TECHNETIUM IMPURITIES FROM URANIUM HEXAFLUORIDE | US ENRICHMENT CORP (US) | 2005-02-16 | — | — | EP | disclosed |
| EP-0984903-A1 | REMOVAL OF TECHNETIUM IMPURITIES FROM URANIUM HEXAFLUORIDE | United States Enrichment Corporation (US) | 2000-03-15 | — | — | EP | disclosed |
| WO-1998052872-A1 | REMOVAL OF TECHNETIUM IMPURITIES FROM URANIUM HEXAFLUORIDE | THE UNITED STATES ENRICHMENT CORPORATION (US) | 1998-11-26 | — | — | WO | disclosed |
| US-5826163-A | TREATING CONTAMINATED URANIUM HEXAFLUORIDE WITH METAL FLUORIDE IN SOLID FORM, WHICH ADSORBS TECHNETIUM | UNITED STATES ENRICHMENT CORPORATION (US) | 1998-10-20 | — | — | US | disclosed |