SCHEMBL4856671

SCHEMBL4856671

C[C](C)C(C)(C)CCCCCCCCCCCCCCO

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 2/20 0.50
CYP4A11 Q02928 2/20 0.50
LMNA P02545 2/20 0.39
ALDH1A1 P00352 2/20 0.39
HSD17B10 Q99714 1/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
TSHR P16473 1/20 0.39
ACLY P53396 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
ACACB O00763 1/20 0.34
ACACA Q13085 1/20 0.34
TDP1 Q9NUW8 2/20 0.32
FFAR1 O14842 1/20 0.31
CPT2 P23786 1/20 0.31
CNR1 P21554 1/20 0.31
CNR2 P34972 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4869449 0.79 GGPS1 (0.43) TSHR
SCHEMBL18305913 0.79 GGPS1 (0.43) TSHR
SCHEMBL10767833 0.79 GGPS1 (0.43) TSHR
SCHEMBL10759608 0.79 GGPS1 (0.43) TSHR
SCHEMBL2108945 0.79 GGPS1 (0.43) TSHR
SCHEMBL100346 0.79 GGPS1 (0.43) TSHR
SCHEMBL9754327 0.79 GGPS1 (0.43) TSHR
SCHEMBL11374546 0.77 CYP4F2 (0.44) CYP4F2CYP4A11LMNAALDH1A1HSD17B10
SCHEMBL10525455 0.77 ACLY (0.34) CYP4F2CYP4A11ACLYACACBACACA
SCHEMBL2108808 0.76 FDPS (0.39) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7323407-B2 Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material SAMSUNG ELECTRONICS CO., LTD (KR) 2008-01-29 US disclosed
US-20060063376-A1 Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-03-23 US disclosed