SCHEMBL487638

SCHEMBL487638

CC(=O)CC(=O)C(=O)O.[Zn]

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ EGLN1 Q9GZT9 2/20 0.42
▸ KDM4E B2RXH2 1/20 0.42
▸ KDM6B O15054 1/20 0.42
▸ KDM5C P41229 1/20 0.42
▸ PHF8 Q9UPP1 1/20 0.42
▸ KDM2A Q9Y2K7 1/20 0.42
▸ MGAM O43451 1/20 0.41
▸ GAA P10253 1/20 0.41
▸ SI P14410 1/20 0.41
▸ MGAM2 Q2M2H8 1/20 0.41
▸ OR51E2 Q9H255 2/20 0.40
▸ HAO1 Q9UJM8 1/20 0.39
▸ HTT P42858 1/20 0.38
▸ FEN1 P39748 4/20 0.37
▸ ERCC5 P28715 3/20 0.37
▸ PTPN1 P18031 1/20 0.37
▸ ALDH1A1 P00352 2/20 0.37
▸ TDP1 Q9NUW8 1/20 0.37
▸ LMNA P02545 1/20 0.36
▸ SLC15A2 Q16348 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL443539 0.97 EGLN1 (0.40) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL19423 0.97 — —
SCHEMBL221240 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL5420640 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL999954 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL9316175 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
Water SCHEMBL7871948 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL2927603 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL1171104 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL1245971 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7858151-B2 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2010-12-28 — — US claimed
EP-1212288-B1 PRODUCTION OF DIARYL CARBONATES USING AMIDES AS PROMOTERS GEN ELECTRIC (US) 2005-11-16 — — EP claimed
WO-2005081789-A2 Formation of CIGS Absorber Layer by Atomic Layer Deposition NANOSOLAR, INC. (US) 2005-09-09 — — WO claimed
US-20050186342-A1 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2005-08-25 — — US claimed
WO-2003089424-A1 6-MEMBERED CYCLIC CARBONATES HUNTSMAN PETROCHEMICAL CORPORATION (US) 2003-10-30 — — WO claimed
JP-2003508377-A — — 2003-03-04 — — JP claimed
EP-1212288-A1 PRODUCTION OF DIARYL CARBONATES USING AMIDES AS PROMOTERS GENERAL ELECTRIC COMPANY (US) 2002-06-12 — — EP claimed
US-6346499-B1 COMPLEX WITH TRANSITION METAL COMPOUND AND ALKALI OR ALKALINE EARTH METAL HALIDE; COCATALYST OF COPPER, TITANIUM, OR CERIUM; OXIDATIVE CARBONYLATION GENERAL ELECTRIC COMPANY 2002-02-12 — — US claimed
WO-2001016088-A1 PRODUCTION OF DIARYL CARBONATES USING AMIDES AS PROMOTERS GENERAL ELECTRIC COMPANY (US) 2001-03-08 — — WO claimed
US-6180812-B1 CARBONYLATING HYDROXYAROMATIC COMPOUND WITH OXYGEN AND CARBON MONOXIDE USING CATALYST COMPRISING GROUP VIII METAL OR COMPOUND THEREOF, ALKALI METAL OR ALKALINE EARTH METAL HALIDE, CARBOXYLIC ACID AMIDE, METAL COMPOUND COCATALYST GENERAL ELECTRIC COMPANY 2001-01-30 — — US claimed
US-H626-H CONTROLLED PARTICLE SIZE DISTRIBUTION AND CRYSTAL STRUCTURE THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1989-04-04 — — US claimed
US-10283230-B2 Production method for coating liquid for formation of transparent conductive film SUMITOMO METAL MINING CO., LTD. (JP) 2019-05-07 — — US disclosed
US-9701849-B2 Method of manufacturing transparent conductive film, the transparent conductive film, element and transparent conductive substrate using the film, as well as device using the substrate SUMITOMO METAL MINING CO., LTD. (JP) 2017-07-11 — — US disclosed
CN-106189237-A Curable resin composition, cured molded article, and method for producing same 李长荣化学工业股份有限公司 2016-12-07 — — CN disclosed
CN-106188500-A Curable resin composition, cured molded article, and method for producing same 李长荣化学工业股份有限公司 2016-12-07 — — CN disclosed
EP-0226635-A1 METHOD FOR NEUTRALIZATION OF ORGANOPHILIC ACIDIC COMPOUNDS. GEN ELECTRIC (US) 1987-07-01 — — EP disclosed
WO-1987000520-A1 METHOD FOR NEUTRALIZATION OF ORGANOPHILIC ACIDIC COMPOUNDS GENERAL ELECTRIC COMPANY (US) 1987-01-29 — — WO disclosed
EP-0082618-B1 METHOD OF PREPARING A POLYMERIC COATING COMPOSITION MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1986-05-28 — — EP disclosed
US-4530859-A Thermally cured, crosslinked polyurethane MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1985-07-23 — — US disclosed
EP-0082618-A2 Method of preparing a polymeric coating composition MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1983-06-29 — — EP disclosed
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