⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL263439 | 0.71 | — | — | |
| SCHEMBL3294 | 0.71 | — | — | |
| SCHEMBL131680 | 0.71 | — | — | |
| SCHEMBL8089227 | 0.71 | — | — | |
| SCHEMBL10632871 | 0.71 | — | — | |
| SCHEMBL4352631 | 0.71 | — | — | |
| SCHEMBL465227 | 0.71 | — | — | |
| SCHEMBL3295 | 0.71 | — | — | |
| SCHEMBL8390528 | 0.71 | — | — | |
| SCHEMBL29402829 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2501837-A1 | METHOD OF PLASMA ETCHING AND PLASMA CHAMBER CLEANING USING F2 AND COF2 | SOLVAY SA (BE) | 2012-09-26 | — | — | EP | disclosed |
| US-20120214312-A1 | Method of plasma etching and plasma chamber cleaning using F2 and COF2 | SOLVAY SA (BE) | 2012-08-23 | — | — | US | disclosed |
| US-20110109020-A1 | HIGH STRENGTH HARD ALLOY AND METHOD OF PREPARING THE SAME | SANALLOY INDUSTRY CO., LTD. (JP) | 2011-05-12 | — | — | US | disclosed |
| WO-2011051409-A1 | METHOD OF PLASMA ETCHING AND PLASMA CHAMBER CLEANING USING F2 AND COF2 | SOLVAY SA (BE) | 2011-05-05 | — | — | WO | disclosed |
| US-7897971-B2 | Display device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-03-01 | — | — | US | disclosed |
| US-7887747-B2 | producing cemented carbide material by subjecting a WC Co system compact to treatment for producing M12C type double carbide by dipping the WC Co system compact in a solution for supplying both W and an oxidizing agent and reducing heat treating the compact at a vacuum atmosphere, carburizationby | SANALLOY INDUSTRY CO., LTD. (JP) | 2011-02-15 | — | — | US | disclosed |
| US-6537380-B2 | Contacting a substrate with ozone and a fluorinated solvent selected from linear, branched, cyclic, acyclic, fully or partially fluorinated hydrocarbons | 3M INNOVATIVE PROPERTIES COMPANY | 2003-03-25 | — | — | US | disclosed |
| US-20020107160-A1 | Fluorinated solvent compositions containing ozone | 3M INNOVATIVE PROPERTIES COMPANY | 2002-08-08 | — | — | US | disclosed |
| US-6372700-B1 | HYDROFLUOROETHERS; SEMICONDUCTORS, INTEGRATED CIRCUITS; OXIDIZING SUBSTRATES | 3M INNOVATIVE PROPERTIES COMPANY | 2002-04-16 | — | — | US | disclosed |