SCHEMBL49455

SCHEMBL49455

CCCN[SiH2]NCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20522631 0.86 ADH1B (0.30)
SCHEMBL888678 0.79 TSHR (0.45)
SCHEMBL12228805 0.74
SCHEMBL28297712 0.72
SCHEMBL18991388 0.72
SCHEMBL17046200 0.72
SCHEMBL16582927 0.67
SCHEMBL21461402 0.67
SCHEMBL21461448 0.67
SCHEMBL12192522 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 325 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12604684-B2 Method and system for mitigating underlayer damage during formation of patterned structures ASM IP HOLDING B.V. (NL) 2026-04-14 US claimed
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250270698-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC 2025-08-28 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20250166990-A1 METHOD FOR FORMING INSULATING FILM, AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2025-05-22 US claimed
US-12276021-B2 Methods of forming phosphosilicate glass layers, structures formed using the methods and systems for performing the methods ASM IP HOLDING B.V. (NL) 2025-04-15 US claimed
US-20250054747-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-02-13 US claimed
EP-4493734-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS Versum Materials US, LLC (US) 2025-01-22 EP claimed
US-20240321571-A1 INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2024-09-26 US claimed
EP-2484801-B1 Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors AIR LIQUIDE (FR) 2017-08-23 EP claimed
US-20170125732-A1 Flexible Organic Light Emitting Display Device and Method of Fabricating the Same LG DISPLAY CO., LTD. (KR) 2017-05-04 US claimed
EP-2484802-B1 Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2017-03-29 EP claimed
EP-2484803-B1 Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors AIR LIQUIDE (FR) 2017-03-29 EP claimed
WO-2016144960-A1 PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-09-15 WO claimed
US-9111897-B2 Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-08-18 US claimed
EP-2484802-A1 Method of deposition of Al2O3/SiO2 stacks from DMAI and silicon precursors L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2012-08-08 EP claimed
EP-2484801-A1 Method of deposition of Al2O3/SiO2 stacks, from TMA or TEA and silicon precursors L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2012-08-08 EP claimed
US-20100009546-A1 Aminosilanes for Shallow Trench Isolation Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-01-14 US claimed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP claimed